Improvement in ferroelectric properties of sol-gel derived SrBi2Ta2O9 thin films with seeding layers

Ching Chich Leu; Chao-Hsin Chien; Ming Jui Yang; Ming Che Yang; Tiao Yuan Huang; Hung Tao Lin; Chen Ti Hu

doi:10.1557/PROC-718-D10.11

Improvement in ferroelectric properties of sol-gel derived SrBi₂Ta₂O₉ thin films with seeding layers

Ching Chich Leu^*, Chao-Hsin Chien, Ming Jui Yang, Ming Che Yang, Tiao Yuan Huang, Hung Tao Lin, Chen Ti Hu

^*Corresponding author for this work

Institute of Electronics

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

The effects of a seeding layer, which was deposited on Pt/TiO₂/SiO₂/Si substrates using magnetron sputtering, on the characteristics of sol-gel-deposited strontium-bismuth-tantalate (SBT) thin films are investigated. The seeding layer serves as nucleation sites so homogeneous crystalline SBT films of bismuth-layered structure (BLS) with fine grains are successfully obtained by 750°C rapid thermal annealing in O₂ ambient. The remanent polarization (2P_r) improves from 12.1 to 18.8 μC/cm² with the addition of the seeding layer. In addition, the seeding layer also results in a lower nucleation temperature, allowing the use of 700°C annealing for 10 min to grow SBT films that are fully crystallized with BLS phase and shows good ferroelectric properties. Finally, crystallinity and microstructures of SBT films are found to be strongly dependent on the thickness of the seeding layer. Optimum Ta-seeded SBT thin film crystallized at 700 °C for 10min depicts a higher 2P_r value (12.9 μC/cm² (@5V) than that of the un-seeded films crystallized at 750 °C for 1min.

Original language	English
Pages (from-to)	189-194
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	718
DOIs	https://doi.org/10.1557/PROC-718-D10.11
State	Published - 2002
Event	Perovskite Materials - San Francisco, CA, United States Duration: 1 Apr 2002 → 5 Apr 2002

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title = "Improvement in ferroelectric properties of sol-gel derived SrBi2Ta2O9 thin films with seeding layers",

abstract = "The effects of a seeding layer, which was deposited on Pt/TiO2/SiO2/Si substrates using magnetron sputtering, on the characteristics of sol-gel-deposited strontium-bismuth-tantalate (SBT) thin films are investigated. The seeding layer serves as nucleation sites so homogeneous crystalline SBT films of bismuth-layered structure (BLS) with fine grains are successfully obtained by 750°C rapid thermal annealing in O2 ambient. The remanent polarization (2Pr) improves from 12.1 to 18.8 μC/cm2 with the addition of the seeding layer. In addition, the seeding layer also results in a lower nucleation temperature, allowing the use of 700°C annealing for 10 min to grow SBT films that are fully crystallized with BLS phase and shows good ferroelectric properties. Finally, crystallinity and microstructures of SBT films are found to be strongly dependent on the thickness of the seeding layer. Optimum Ta-seeded SBT thin film crystallized at 700 °C for 10min depicts a higher 2Pr value (12.9 μC/cm2 (@5V) than that of the un-seeded films crystallized at 750 °C for 1min.",

author = "Leu, {Ching Chich} and Chao-Hsin Chien and Yang, {Ming Jui} and Yang, {Ming Che} and Huang, {Tiao Yuan} and Lin, {Hung Tao} and Hu, {Chen Ti}",

year = "2002",

doi = "10.1557/PROC-718-D10.11",

language = "English",

volume = "718",

pages = "189--194",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

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note = "Perovskite Materials ; Conference date: 01-04-2002 Through 05-04-2002",

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T1 - Improvement in ferroelectric properties of sol-gel derived SrBi2Ta2O9 thin films with seeding layers

AU - Leu, Ching Chich

AU - Chien, Chao-Hsin

AU - Yang, Ming Jui

AU - Yang, Ming Che

AU - Huang, Tiao Yuan

AU - Lin, Hung Tao

AU - Hu, Chen Ti

PY - 2002

Y1 - 2002

N2 - The effects of a seeding layer, which was deposited on Pt/TiO2/SiO2/Si substrates using magnetron sputtering, on the characteristics of sol-gel-deposited strontium-bismuth-tantalate (SBT) thin films are investigated. The seeding layer serves as nucleation sites so homogeneous crystalline SBT films of bismuth-layered structure (BLS) with fine grains are successfully obtained by 750°C rapid thermal annealing in O2 ambient. The remanent polarization (2Pr) improves from 12.1 to 18.8 μC/cm2 with the addition of the seeding layer. In addition, the seeding layer also results in a lower nucleation temperature, allowing the use of 700°C annealing for 10 min to grow SBT films that are fully crystallized with BLS phase and shows good ferroelectric properties. Finally, crystallinity and microstructures of SBT films are found to be strongly dependent on the thickness of the seeding layer. Optimum Ta-seeded SBT thin film crystallized at 700 °C for 10min depicts a higher 2Pr value (12.9 μC/cm2 (@5V) than that of the un-seeded films crystallized at 750 °C for 1min.

AB - The effects of a seeding layer, which was deposited on Pt/TiO2/SiO2/Si substrates using magnetron sputtering, on the characteristics of sol-gel-deposited strontium-bismuth-tantalate (SBT) thin films are investigated. The seeding layer serves as nucleation sites so homogeneous crystalline SBT films of bismuth-layered structure (BLS) with fine grains are successfully obtained by 750°C rapid thermal annealing in O2 ambient. The remanent polarization (2Pr) improves from 12.1 to 18.8 μC/cm2 with the addition of the seeding layer. In addition, the seeding layer also results in a lower nucleation temperature, allowing the use of 700°C annealing for 10 min to grow SBT films that are fully crystallized with BLS phase and shows good ferroelectric properties. Finally, crystallinity and microstructures of SBT films are found to be strongly dependent on the thickness of the seeding layer. Optimum Ta-seeded SBT thin film crystallized at 700 °C for 10min depicts a higher 2Pr value (12.9 μC/cm2 (@5V) than that of the un-seeded films crystallized at 750 °C for 1min.

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U2 - 10.1557/PROC-718-D10.11

DO - 10.1557/PROC-718-D10.11

M3 - Conference article

AN - SCOPUS:0036452480

SN - 0272-9172

VL - 718

SP - 189

EP - 194

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Perovskite Materials

Y2 - 1 April 2002 through 5 April 2002

ER -

Improvement in ferroelectric properties of sol-gel derived SrBi₂Ta₂O₉ thin films with seeding layers

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