Improvement in ferroelectric properties of sol-gel derived SrBi2Ta2O9 thin films with seeding layers

Ching Chich Leu*, Chao-Hsin Chien, Ming Jui Yang, Ming Che Yang, Tiao Yuan Huang, Hung Tao Lin, Chen Ti Hu

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

1 Scopus citations


The effects of a seeding layer, which was deposited on Pt/TiO2/SiO2/Si substrates using magnetron sputtering, on the characteristics of sol-gel-deposited strontium-bismuth-tantalate (SBT) thin films are investigated. The seeding layer serves as nucleation sites so homogeneous crystalline SBT films of bismuth-layered structure (BLS) with fine grains are successfully obtained by 750°C rapid thermal annealing in O2 ambient. The remanent polarization (2Pr) improves from 12.1 to 18.8 μC/cm2 with the addition of the seeding layer. In addition, the seeding layer also results in a lower nucleation temperature, allowing the use of 700°C annealing for 10 min to grow SBT films that are fully crystallized with BLS phase and shows good ferroelectric properties. Finally, crystallinity and microstructures of SBT films are found to be strongly dependent on the thickness of the seeding layer. Optimum Ta-seeded SBT thin film crystallized at 700 °C for 10min depicts a higher 2Pr value (12.9 μC/cm2 (@5V) than that of the un-seeded films crystallized at 750 °C for 1min.

Original languageEnglish
Pages (from-to)189-194
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
StatePublished - 1 Jan 2002
EventPerovskite Materials - San Francisco, CA, United States
Duration: 1 Apr 20025 Apr 2002


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