Abstract
In this paper, we propose several methods to improve the efficiency droop of GaNbased light-emitting diodes by optimization of active regions, such as alternative substrates, semipolar MQWs, insertion layer, graded-thickness MQWs, and graded-composition EBL.
Original language | English |
---|---|
Article number | AS3F.4 |
Journal | Asia Communications and Photonics Conference, ACP |
DOIs | |
State | Published - 2012 |
Event | 2012 Asia Communications and Photonics Conference, ACP 2012 - Guangzhou, China Duration: 7 Nov 2012 → 10 Nov 2012 |