Improved ultrathin gate oxide integrity in p+-polysilicon-gate p-channel metal oxide semiconductor with medium-dose fluorine implantation

Chi Chun Chen; Horng-Chih Lin; Chun Yen Chang; Tiao Yuan Huang; Chao-Hsin Chien; Mong Song Liang

doi:10.1149/1.1391127

Improved ultrathin gate oxide integrity in p⁺-polysilicon-gate p-channel metal oxide semiconductor with medium-dose fluorine implantation

Chi Chun Chen, Horng-Chih Lin, Chun Yen Chang, Tiao Yuan Huang, Chao-Hsin Chien, Mong Song Liang

Institute of Electronics

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Effects of fluorine incorporation on ultrathin (4 nm) gate oxide integrity were investigated by fluorine co-implantation into p⁺ polysilicon gate. In contrast to previous reports that fluorine incorporation worsens boron penetration and degrades oxide reliability, it was observed that with a medium F⁺ dose (approximately 1×10¹⁴ cm^-2), charge-to-breakdown characteristics can be improved without noticeable enhancement of boron penetration. It was also observed that fluorinated oxide depicts improved immunity to plasma damage as is evidenced by suppressed gate leakage current of antenna devices after plasma processing.

Original language	English
Pages (from-to)	290-292
Number of pages	3
Journal	Electrochemical and Solid-State Letters
Volume	3
Issue number	6
DOIs	https://doi.org/10.1149/1.1391127
State	Published - 1 Jun 2000

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title = "Improved ultrathin gate oxide integrity in p+-polysilicon-gate p-channel metal oxide semiconductor with medium-dose fluorine implantation",

abstract = "Effects of fluorine incorporation on ultrathin (4 nm) gate oxide integrity were investigated by fluorine co-implantation into p+ polysilicon gate. In contrast to previous reports that fluorine incorporation worsens boron penetration and degrades oxide reliability, it was observed that with a medium F+ dose (approximately 1×1014 cm-2), charge-to-breakdown characteristics can be improved without noticeable enhancement of boron penetration. It was also observed that fluorinated oxide depicts improved immunity to plasma damage as is evidenced by suppressed gate leakage current of antenna devices after plasma processing.",

author = "Chen, {Chi Chun} and Horng-Chih Lin and Chang, {Chun Yen} and Huang, {Tiao Yuan} and Chao-Hsin Chien and Liang, {Mong Song}",

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AU - Chen, Chi Chun

AU - Lin, Horng-Chih

AU - Chang, Chun Yen

AU - Huang, Tiao Yuan

AU - Chien, Chao-Hsin

AU - Liang, Mong Song

PY - 2000/6/1

Y1 - 2000/6/1

N2 - Effects of fluorine incorporation on ultrathin (4 nm) gate oxide integrity were investigated by fluorine co-implantation into p+ polysilicon gate. In contrast to previous reports that fluorine incorporation worsens boron penetration and degrades oxide reliability, it was observed that with a medium F+ dose (approximately 1×1014 cm-2), charge-to-breakdown characteristics can be improved without noticeable enhancement of boron penetration. It was also observed that fluorinated oxide depicts improved immunity to plasma damage as is evidenced by suppressed gate leakage current of antenna devices after plasma processing.

AB - Effects of fluorine incorporation on ultrathin (4 nm) gate oxide integrity were investigated by fluorine co-implantation into p+ polysilicon gate. In contrast to previous reports that fluorine incorporation worsens boron penetration and degrades oxide reliability, it was observed that with a medium F+ dose (approximately 1×1014 cm-2), charge-to-breakdown characteristics can be improved without noticeable enhancement of boron penetration. It was also observed that fluorinated oxide depicts improved immunity to plasma damage as is evidenced by suppressed gate leakage current of antenna devices after plasma processing.

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JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

IS - 6

ER -

Improved ultrathin gate oxide integrity in p⁺-polysilicon-gate p-channel metal oxide semiconductor with medium-dose fluorine implantation

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