Improved TDDB Reliability and Interface States in 5-nm Hf0.5Zr0.5O2 Ferroelectric Technologies Using NH3 Plasma and Microwave Annealing

Yi Hsuan Chen; Chun-Jung Su; Ting-Hsin Yang; Chen-Ming Hu; Tian-Li Wu

doi:10.1109/ted.2020.2973652

Improved TDDB Reliability and Interface States in 5-nm Hf0.5Zr0.5O2 Ferroelectric Technologies Using NH3 Plasma and Microwave Annealing

Yi Hsuan Chen, Chun-Jung Su, Ting-Hsin Yang, Chen-Ming Hu, Tian-Li Wu^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

37 Scopus citations

Abstract

This article reports that the enhanced forward gate bias time-dependent dielectric breakdown (TDDB) reliability and interface quality are achieved in 5-nm ferroelectric Hf 0.5 Zr 0.5 O 2 (HZO) technologies by using the NH 3 plasma interfacial layer (IL) treatment and microwave annealing (MWA). An orthorhombic crystalline phase is observed in the annealed HZO film with NH 3 plasma IL treatment and MWA, and NH 3 plasma IL treatment can suppress Hf/Zr interdiffusion. Metal-oxide-semiconductor capacitors (MOSCAPs) subjected to NH 3 plasma IL treatment and 2100-W MWA also have a higher extrapolated operating voltage for a ten-year lifetime at 0.01% failure and lower interface state density ( Dit ) compared to the devices subjected to only rapid thermal annealing (RTA) at 600 °C. Therefore, NH 3 plasma treatment and MWA are effective for improving the TDDB reliability and interface quality of the ultrathin ferroelectric HZO.

Original language	English
Pages (from-to)	1581-1585
Number of pages	5
Journal	IEEE Transactions on Electron Devices
Volume	67
Issue number	4
DOIs	https://doi.org/10.1109/ted.2020.2973652
State	Published - Apr 2020

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@article{cf49f898107e4ae293118e7f889681fe,

title = "Improved TDDB Reliability and Interface States in 5-nm Hf0.5Zr0.5O2 Ferroelectric Technologies Using NH3 Plasma and Microwave Annealing",

abstract = "This article reports that the enhanced forward gate bias time-dependent dielectric breakdown (TDDB) reliability and interface quality are achieved in 5-nm ferroelectric Hf 0.5 Zr 0.5 O 2 (HZO) technologies by using the NH 3 plasma interfacial layer (IL) treatment and microwave annealing (MWA). An orthorhombic crystalline phase is observed in the annealed HZO film with NH 3 plasma IL treatment and MWA, and NH 3 plasma IL treatment can suppress Hf/Zr interdiffusion. Metal-oxide-semiconductor capacitors (MOSCAPs) subjected to NH 3 plasma IL treatment and 2100-W MWA also have a higher extrapolated operating voltage for a ten-year lifetime at 0.01% failure and lower interface state density ( Dit ) compared to the devices subjected to only rapid thermal annealing (RTA) at 600 °C. Therefore, NH 3 plasma treatment and MWA are effective for improving the TDDB reliability and interface quality of the ultrathin ferroelectric HZO.",

author = "Chen, {Yi Hsuan} and Chun-Jung Su and Ting-Hsin Yang and Chen-Ming Hu and Tian-Li Wu",

year = "2020",

month = apr,

doi = "10.1109/ted.2020.2973652",

language = "English",

volume = "67",

pages = "1581--1585",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "4",

}

TY - JOUR

T1 - Improved TDDB Reliability and Interface States in 5-nm Hf0.5Zr0.5O2 Ferroelectric Technologies Using NH3 Plasma and Microwave Annealing

AU - Chen, Yi Hsuan

AU - Su, Chun-Jung

AU - Yang, Ting-Hsin

AU - Hu, Chen-Ming

AU - Wu, Tian-Li

PY - 2020/4

Y1 - 2020/4

N2 - This article reports that the enhanced forward gate bias time-dependent dielectric breakdown (TDDB) reliability and interface quality are achieved in 5-nm ferroelectric Hf 0.5 Zr 0.5 O 2 (HZO) technologies by using the NH 3 plasma interfacial layer (IL) treatment and microwave annealing (MWA). An orthorhombic crystalline phase is observed in the annealed HZO film with NH 3 plasma IL treatment and MWA, and NH 3 plasma IL treatment can suppress Hf/Zr interdiffusion. Metal-oxide-semiconductor capacitors (MOSCAPs) subjected to NH 3 plasma IL treatment and 2100-W MWA also have a higher extrapolated operating voltage for a ten-year lifetime at 0.01% failure and lower interface state density ( Dit ) compared to the devices subjected to only rapid thermal annealing (RTA) at 600 °C. Therefore, NH 3 plasma treatment and MWA are effective for improving the TDDB reliability and interface quality of the ultrathin ferroelectric HZO.

AB - This article reports that the enhanced forward gate bias time-dependent dielectric breakdown (TDDB) reliability and interface quality are achieved in 5-nm ferroelectric Hf 0.5 Zr 0.5 O 2 (HZO) technologies by using the NH 3 plasma interfacial layer (IL) treatment and microwave annealing (MWA). An orthorhombic crystalline phase is observed in the annealed HZO film with NH 3 plasma IL treatment and MWA, and NH 3 plasma IL treatment can suppress Hf/Zr interdiffusion. Metal-oxide-semiconductor capacitors (MOSCAPs) subjected to NH 3 plasma IL treatment and 2100-W MWA also have a higher extrapolated operating voltage for a ten-year lifetime at 0.01% failure and lower interface state density ( Dit ) compared to the devices subjected to only rapid thermal annealing (RTA) at 600 °C. Therefore, NH 3 plasma treatment and MWA are effective for improving the TDDB reliability and interface quality of the ultrathin ferroelectric HZO.

UR - https://www.mendeley.com/catalogue/7235738c-69da-32e6-a5ac-1e523eea9b56/

U2 - 10.1109/ted.2020.2973652

DO - 10.1109/ted.2020.2973652

M3 - Article

SN - 0018-9383

VL - 67

SP - 1581

EP - 1585

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 4

ER -

Improved TDDB Reliability and Interface States in 5-nm Hf0.5Zr0.5O2 Ferroelectric Technologies Using NH3 Plasma and Microwave Annealing

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