Improved scalability of high-k gate dielectrics by using hf-aluminates

Tuo-Hung Hou*, J. Gutt, C. Lim, S. Marcus, C. Pomarede, E. Shero, H. De Warrd, C. Werkhoven, M. Gardner, R. W. Murto, H. R. Huff

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

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Engineering & Materials Science