To satisfy the urgent need for suitable high-k dielectrics with scalability down to sub nm EOT, ALCVD TM HfO 2 and Hf-Aluminates were studied in this work. The scalability of ALCVD HfO 2 is limited by its high defect density and by the interface reaction with the conventional poly-Si gate process. The high defect density with thin HfO 2 dielectrics results in the significant yield loss in the larger devices, and the interface reaction with the poly-Si gate process makes the EOT thicker. Therefore, EOT scaling of ALCVD HfO 2 can be very challenging. In contrast, ALCVD Hf-Aluminates have moderate dielectric constant, low defect density and minimal EOT increase in the poly-Si gate process due to the Al incorporation in the bottom interfacial layer. They become attractive high-k dielectrics with enhanced scalability toward sub nm EOT application.
|Number of pages||8|
|State||Published - Oct 2002|
|Event||Physics and Technology of High-k Gate Dielectric I - Proceedings of the International Symposium on High Dielectric Constant Materials: Materials Science, Processing Reliability, and Manufacturing Issues - Salt Lake City, UT, United States|
Duration: 20 Oct 2002 → 24 Oct 2002
|Conference||Physics and Technology of High-k Gate Dielectric I - Proceedings of the International Symposium on High Dielectric Constant Materials: Materials Science, Processing Reliability, and Manufacturing Issues|
|City||Salt Lake City, UT|
|Period||20/10/02 → 24/10/02|