Improved scalability of high-k gate dielectrics by using hf-aluminates

Tuo-Hung Hou; J. Gutt; C. Lim; S. Marcus; C. Pomarede; E. Shero; H. De Warrd; C. Werkhoven; M. Gardner; R. W. Murto; H. R. Huff

Improved scalability of high-k gate dielectrics by using hf-aluminates

Tuo-Hung Hou^*, J. Gutt, C. Lim, S. Marcus, C. Pomarede, E. Shero, H. De Warrd, C. Werkhoven, M. Gardner, R. W. Murto, H. R. Huff

^*Corresponding author for this work

Institute of Electronics

Research output: Contribution to conference › Paper › peer-review

Abstract

To satisfy the urgent need for suitable high-k dielectrics with scalability down to sub nm EOT, ALCVD ^TM HfO ₂ and Hf-Aluminates were studied in this work. The scalability of ALCVD HfO ₂ is limited by its high defect density and by the interface reaction with the conventional poly-Si gate process. The high defect density with thin HfO ₂ dielectrics results in the significant yield loss in the larger devices, and the interface reaction with the poly-Si gate process makes the EOT thicker. Therefore, EOT scaling of ALCVD HfO ₂ can be very challenging. In contrast, ALCVD Hf-Aluminates have moderate dielectric constant, low defect density and minimal EOT increase in the poly-Si gate process due to the Al incorporation in the bottom interfacial layer. They become attractive high-k dielectrics with enhanced scalability toward sub nm EOT application.

Original language	English
Pages	141-148
Number of pages	8
State	Published - Oct 2002
Event	Physics and Technology of High-k Gate Dielectric I - Proceedings of the International Symposium on High Dielectric Constant Materials: Materials Science, Processing Reliability, and Manufacturing Issues - Salt Lake City, UT, United States Duration: 20 Oct 2002 → 24 Oct 2002

Conference

Conference	Physics and Technology of High-k Gate Dielectric I - Proceedings of the International Symposium on High Dielectric Constant Materials: Materials Science, Processing Reliability, and Manufacturing Issues
Country/Territory	United States
City	Salt Lake City, UT
Period	20/10/02 → 24/10/02

Cite this

Hou, T.-H., Gutt, J., Lim, C., Marcus, S., Pomarede, C., Shero, E., De Warrd, H., Werkhoven, C., Gardner, M., Murto, R. W., & Huff, H. R. (2002). Improved scalability of high-k gate dielectrics by using hf-aluminates. 141-148. Paper presented at Physics and Technology of High-k Gate Dielectric I - Proceedings of the International Symposium on High Dielectric Constant Materials: Materials Science, Processing Reliability, and Manufacturing Issues, Salt Lake City, UT, United States.

Hou, Tuo-Hung ; Gutt, J. ; Lim, C. et al. / Improved scalability of high-k gate dielectrics by using hf-aluminates. Paper presented at Physics and Technology of High-k Gate Dielectric I - Proceedings of the International Symposium on High Dielectric Constant Materials: Materials Science, Processing Reliability, and Manufacturing Issues, Salt Lake City, UT, United States.8 p.

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title = "Improved scalability of high-k gate dielectrics by using hf-aluminates",

abstract = "To satisfy the urgent need for suitable high-k dielectrics with scalability down to sub nm EOT, ALCVD TM HfO 2 and Hf-Aluminates were studied in this work. The scalability of ALCVD HfO 2 is limited by its high defect density and by the interface reaction with the conventional poly-Si gate process. The high defect density with thin HfO 2 dielectrics results in the significant yield loss in the larger devices, and the interface reaction with the poly-Si gate process makes the EOT thicker. Therefore, EOT scaling of ALCVD HfO 2 can be very challenging. In contrast, ALCVD Hf-Aluminates have moderate dielectric constant, low defect density and minimal EOT increase in the poly-Si gate process due to the Al incorporation in the bottom interfacial layer. They become attractive high-k dielectrics with enhanced scalability toward sub nm EOT application.",

author = "Tuo-Hung Hou and J. Gutt and C. Lim and S. Marcus and C. Pomarede and E. Shero and {De Warrd}, H. and C. Werkhoven and M. Gardner and Murto, {R. W.} and Huff, {H. R.}",

year = "2002",

month = oct,

language = "English",

pages = "141--148",

note = "Physics and Technology of High-k Gate Dielectric I - Proceedings of the International Symposium on High Dielectric Constant Materials: Materials Science, Processing Reliability, and Manufacturing Issues ; Conference date: 20-10-2002 Through 24-10-2002",

}

Hou, T-H, Gutt, J, Lim, C, Marcus, S, Pomarede, C, Shero, E, De Warrd, H, Werkhoven, C, Gardner, M, Murto, RW & Huff, HR 2002, 'Improved scalability of high-k gate dielectrics by using hf-aluminates', Paper presented at Physics and Technology of High-k Gate Dielectric I - Proceedings of the International Symposium on High Dielectric Constant Materials: Materials Science, Processing Reliability, and Manufacturing Issues, Salt Lake City, UT, United States, 20/10/02 - 24/10/02 pp. 141-148.

Improved scalability of high-k gate dielectrics by using hf-aluminates. / Hou, Tuo-Hung; Gutt, J.; Lim, C. et al.
2002. 141-148 Paper presented at Physics and Technology of High-k Gate Dielectric I - Proceedings of the International Symposium on High Dielectric Constant Materials: Materials Science, Processing Reliability, and Manufacturing Issues, Salt Lake City, UT, United States.

Research output: Contribution to conference › Paper › peer-review

TY - CONF

T1 - Improved scalability of high-k gate dielectrics by using hf-aluminates

AU - Hou, Tuo-Hung

AU - Gutt, J.

AU - Lim, C.

AU - Marcus, S.

AU - Pomarede, C.

AU - Shero, E.

AU - De Warrd, H.

AU - Werkhoven, C.

AU - Gardner, M.

AU - Murto, R. W.

AU - Huff, H. R.

PY - 2002/10

Y1 - 2002/10

N2 - To satisfy the urgent need for suitable high-k dielectrics with scalability down to sub nm EOT, ALCVD TM HfO 2 and Hf-Aluminates were studied in this work. The scalability of ALCVD HfO 2 is limited by its high defect density and by the interface reaction with the conventional poly-Si gate process. The high defect density with thin HfO 2 dielectrics results in the significant yield loss in the larger devices, and the interface reaction with the poly-Si gate process makes the EOT thicker. Therefore, EOT scaling of ALCVD HfO 2 can be very challenging. In contrast, ALCVD Hf-Aluminates have moderate dielectric constant, low defect density and minimal EOT increase in the poly-Si gate process due to the Al incorporation in the bottom interfacial layer. They become attractive high-k dielectrics with enhanced scalability toward sub nm EOT application.

AB - To satisfy the urgent need for suitable high-k dielectrics with scalability down to sub nm EOT, ALCVD TM HfO 2 and Hf-Aluminates were studied in this work. The scalability of ALCVD HfO 2 is limited by its high defect density and by the interface reaction with the conventional poly-Si gate process. The high defect density with thin HfO 2 dielectrics results in the significant yield loss in the larger devices, and the interface reaction with the poly-Si gate process makes the EOT thicker. Therefore, EOT scaling of ALCVD HfO 2 can be very challenging. In contrast, ALCVD Hf-Aluminates have moderate dielectric constant, low defect density and minimal EOT increase in the poly-Si gate process due to the Al incorporation in the bottom interfacial layer. They become attractive high-k dielectrics with enhanced scalability toward sub nm EOT application.

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M3 - Paper

AN - SCOPUS:8744287726

SP - 141

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T2 - Physics and Technology of High-k Gate Dielectric I - Proceedings of the International Symposium on High Dielectric Constant Materials: Materials Science, Processing Reliability, and Manufacturing Issues

Y2 - 20 October 2002 through 24 October 2002

ER -

Hou TH, Gutt J, Lim C, Marcus S, Pomarede C, Shero E et al.. Improved scalability of high-k gate dielectrics by using hf-aluminates. 2002. Paper presented at Physics and Technology of High-k Gate Dielectric I - Proceedings of the International Symposium on High Dielectric Constant Materials: Materials Science, Processing Reliability, and Manufacturing Issues, Salt Lake City, UT, United States.

Improved scalability of high-k gate dielectrics by using hf-aluminates

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