Improved retention characteristic in polycrystalline silicon-oxide-hafnium oxide-oxide-silicon-type nonvolatile memory with robust tunnel oxynitride
- Chih Ren Hsieh
- , Chiung Hui Lai
- , Bo Chun Lin
- , Yuan Kai Zheng
- , Jen Chung Lou
- , Kuo-Jui Lin
Research output: Contribution to journal › Article › peer-review
2
Scopus
citations