Improved resistive switching characteristics by Al2O3 layers inclusion in HfO2-based RRAM devices

Chun Yang Huang; Jheng Hong Jieng; Wen Yueh Jang; Chen Hsi Lin; Tseung-Yuen Tseng

doi:10.1149/2.006308ssl

Improved resistive switching characteristics by Al2O3 layers inclusion in HfO2-based RRAM devices

Chun Yang Huang, Jheng Hong Jieng, Wen Yueh Jang, Chen Hsi Lin, Tseung-Yuen Tseng

Institute of Electronics

Research output: Contribution to journal › Article › peer-review

26 Scopus citations

Abstract

A series of complex HfO₂/Al₂O₃ layer by layer resistive random access memory(RRAM) structure grown by atomic layer deposition are investigated. The modulation of forming voltage can be achieved by controlling the number of Al₂O₃ layers in HfO ₂ devices. In addition, the crystallization temperature of HfO ₂ based RRAM devices can also be improved by insetting Al ₂O₃ layers in HfO₂ film. Compared with pure HfO₂ device, a significant improvement in resistive switching properties such as forming voltage variation and the distribution of HRS/LRS during resistance switching is demonstrated in the HfO₂/Al ₂O₃ layer by layer devices. Moreover, good endurance characteristic and highly reliable multibit operation are also achieved in this device structure.

Original language	English
Journal	ECS Solid State Letters
Volume	2
Issue number	8
DOIs	https://doi.org/10.1149/2.006308ssl
State	Published - May 2013

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title = "Improved resistive switching characteristics by Al2O3 layers inclusion in HfO2-based RRAM devices",

abstract = "A series of complex HfO2/Al2O3 layer by layer resistive random access memory(RRAM) structure grown by atomic layer deposition are investigated. The modulation of forming voltage can be achieved by controlling the number of Al2O3 layers in HfO 2 devices. In addition, the crystallization temperature of HfO 2 based RRAM devices can also be improved by insetting Al 2O3 layers in HfO2 film. Compared with pure HfO2 device, a significant improvement in resistive switching properties such as forming voltage variation and the distribution of HRS/LRS during resistance switching is demonstrated in the HfO2/Al 2O3 layer by layer devices. Moreover, good endurance characteristic and highly reliable multibit operation are also achieved in this device structure.",

author = "Huang, {Chun Yang} and Jieng, {Jheng Hong} and Jang, {Wen Yueh} and Lin, {Chen Hsi} and Tseung-Yuen Tseng",

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doi = "10.1149/2.006308ssl",

language = "English",

volume = "2",

journal = "ECS Solid State Letters",

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T1 - Improved resistive switching characteristics by Al2O3 layers inclusion in HfO2-based RRAM devices

AU - Huang, Chun Yang

AU - Jieng, Jheng Hong

AU - Jang, Wen Yueh

AU - Lin, Chen Hsi

AU - Tseng, Tseung-Yuen

PY - 2013/5

Y1 - 2013/5

N2 - A series of complex HfO2/Al2O3 layer by layer resistive random access memory(RRAM) structure grown by atomic layer deposition are investigated. The modulation of forming voltage can be achieved by controlling the number of Al2O3 layers in HfO 2 devices. In addition, the crystallization temperature of HfO 2 based RRAM devices can also be improved by insetting Al 2O3 layers in HfO2 film. Compared with pure HfO2 device, a significant improvement in resistive switching properties such as forming voltage variation and the distribution of HRS/LRS during resistance switching is demonstrated in the HfO2/Al 2O3 layer by layer devices. Moreover, good endurance characteristic and highly reliable multibit operation are also achieved in this device structure.

AB - A series of complex HfO2/Al2O3 layer by layer resistive random access memory(RRAM) structure grown by atomic layer deposition are investigated. The modulation of forming voltage can be achieved by controlling the number of Al2O3 layers in HfO 2 devices. In addition, the crystallization temperature of HfO 2 based RRAM devices can also be improved by insetting Al 2O3 layers in HfO2 film. Compared with pure HfO2 device, a significant improvement in resistive switching properties such as forming voltage variation and the distribution of HRS/LRS during resistance switching is demonstrated in the HfO2/Al 2O3 layer by layer devices. Moreover, good endurance characteristic and highly reliable multibit operation are also achieved in this device structure.

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VL - 2

JO - ECS Solid State Letters

JF - ECS Solid State Letters

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ER -

Improved resistive switching characteristics by Al2O3 layers inclusion in HfO2-based RRAM devices

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