Improved rear-side passivation by atomic layer deposition A 2 O 3 /SiN x stack layers for high V OC industrial p-type silicon solar cells

Je Wei Lin; Yi Yang Chen; Jon Yiew Gan; Wei Ping Hseih; Chen Hsu Du; Tien-Sheng Chao

doi:10.1109/LED.2013.2271894

Improved rear-side passivation by atomic layer deposition A ₂ O ₃ /SiN _x stack layers for high V _OC industrial p-type silicon solar cells

Je Wei Lin, Yi Yang Chen, Jon Yiew Gan, Wei Ping Hseih, Chen Hsu Du, Tien-Sheng Chao

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

This research develops high open-circuit voltage (VOC)p-type industrial screen-printed silicon solar cells using improved rear surface passivation. It shows a significant improvement in the minority carrier lifetime by low temperature (< 450° C) thermal atomic layer deposition of Al ₂ O ₃ layers and plasma-enhanced chemical vapor deposition of SiN _x passivation layers. An increase in the V _OC and the short-circuit current (J _SC ) due to an improved long-wavelength response are also demonstrated. With the optimized stack layers, a high efficiency of 19.2% across a large area (156 cm ² ) is seen. Furthermore, the rear-side passivation scheme can be easily integrated into the conventional screen-printed process. This is very promising for in-line solar cell manufacturing.

Original language	English
Article number	6558507
Pages (from-to)	1163-1165
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	34
Issue number	9
DOIs	https://doi.org/10.1109/LED.2013.2271894
State	Published - 3 Sep 2013

Keywords

Al O /SiN stack layers
negative fixed charge
open-circuit voltage
surface passivation

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10.1109/LED.2013.2271894

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title = "Improved rear-side passivation by atomic layer deposition A 2 O 3 /SiN x stack layers for high V OC industrial p-type silicon solar cells",

abstract = " This research develops high open-circuit voltage (VOC)p-type industrial screen-printed silicon solar cells using improved rear surface passivation. It shows a significant improvement in the minority carrier lifetime by low temperature (< 450° C) thermal atomic layer deposition of Al 2 O 3 layers and plasma-enhanced chemical vapor deposition of SiN x passivation layers. An increase in the V OC and the short-circuit current (J SC ) due to an improved long-wavelength response are also demonstrated. With the optimized stack layers, a high efficiency of 19.2% across a large area (156 cm 2 ) is seen. Furthermore, the rear-side passivation scheme can be easily integrated into the conventional screen-printed process. This is very promising for in-line solar cell manufacturing.",

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author = "Lin, {Je Wei} and Chen, {Yi Yang} and Gan, {Jon Yiew} and Hseih, {Wei Ping} and Du, {Chen Hsu} and Tien-Sheng Chao",

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AU - Hseih, Wei Ping

AU - Du, Chen Hsu

AU - Chao, Tien-Sheng

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AB - This research develops high open-circuit voltage (VOC)p-type industrial screen-printed silicon solar cells using improved rear surface passivation. It shows a significant improvement in the minority carrier lifetime by low temperature (< 450° C) thermal atomic layer deposition of Al 2 O 3 layers and plasma-enhanced chemical vapor deposition of SiN x passivation layers. An increase in the V OC and the short-circuit current (J SC ) due to an improved long-wavelength response are also demonstrated. With the optimized stack layers, a high efficiency of 19.2% across a large area (156 cm 2 ) is seen. Furthermore, the rear-side passivation scheme can be easily integrated into the conventional screen-printed process. This is very promising for in-line solar cell manufacturing.

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KW - negative fixed charge

KW - open-circuit voltage

KW - surface passivation

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Improved rear-side passivation by atomic layer deposition A ₂ O ₃ /SiN _x stack layers for high V _OC industrial p-type silicon solar cells

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Keywords

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