Improved radio frequency power characteristics of complementary metal-oxide-semiconductor-compatible asymmetric-lightly-doped-drain metal-oxide-semiconductor transistor

Tsu Chang; Hsuan Ling Kao; Y. J. Chen; Albert Chin

doi:10.1143/JJAP.49.034201

Improved radio frequency power characteristics of complementary metal-oxide-semiconductor-compatible asymmetric-lightly-doped-drain metal-oxide-semiconductor transistor

Tsu Chang, Hsuan Ling Kao^*, Y. J. Chen, Albert Chin

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

We have characterized and modeled the radio frequency (RF) power performance of a 0.18 mm asymmetric-lightly-doped-drain metal-oxide- semiconductor field-effect transistor (LDD MOSFET). In comparison with the conventional 0.18 mm MOSFET, this asymmetric-LDD device shows a larger power density of 0.54W/mm, and 8 dB better adjacent channel power ratio (ACPR) linearity at 2.4 GHz from the improved twice DC breakdown voltage of 6.9 V. These significant improvements of RF power performance in the asymmetric-LDD transistor are important for the medium RF power amplifier application.

Original language	English
Journal	Japanese Journal of Applied Physics
Volume	49
Issue number	3 PART 1
DOIs	https://doi.org/10.1143/JJAP.49.034201
State	Published - 1 Jul 2010

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abstract = "We have characterized and modeled the radio frequency (RF) power performance of a 0.18 mm asymmetric-lightly-doped-drain metal-oxide- semiconductor field-effect transistor (LDD MOSFET). In comparison with the conventional 0.18 mm MOSFET, this asymmetric-LDD device shows a larger power density of 0.54W/mm, and 8 dB better adjacent channel power ratio (ACPR) linearity at 2.4 GHz from the improved twice DC breakdown voltage of 6.9 V. These significant improvements of RF power performance in the asymmetric-LDD transistor are important for the medium RF power amplifier application.",

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AU - Chen, Y. J.

AU - Chin, Albert

PY - 2010/7/1

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AB - We have characterized and modeled the radio frequency (RF) power performance of a 0.18 mm asymmetric-lightly-doped-drain metal-oxide- semiconductor field-effect transistor (LDD MOSFET). In comparison with the conventional 0.18 mm MOSFET, this asymmetric-LDD device shows a larger power density of 0.54W/mm, and 8 dB better adjacent channel power ratio (ACPR) linearity at 2.4 GHz from the improved twice DC breakdown voltage of 6.9 V. These significant improvements of RF power performance in the asymmetric-LDD transistor are important for the medium RF power amplifier application.

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IS - 3 PART 1

ER -

Improved radio frequency power characteristics of complementary metal-oxide-semiconductor-compatible asymmetric-lightly-doped-drain metal-oxide-semiconductor transistor

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