Abstract
The InGaN/sapphire-based photovoltaic (PV) cells with Al 0.14Ga0.86N/In0.21Ga0.79N superlattice structures that serve as absorption layers were grown on patterned sapphire substrates (PSSs). Under global air-mass 1.5 conditions, the shortcircuit current density, the open-circuit voltage, and the fill factor obtained from the PV cells were 1.21 mA/cm2, 2.18 V, and 0.65, respectively, corresponding to a conversion efficiency of 1.71%. Compared with PV devices grown on flat sapphire substrates, the photocurrent of PSS-grown PV devices was enhanced by 26%. The improved PV performance was attributable to the positive effects of the PSS on the material quality.
Original language | English |
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Article number | 5719623 |
Pages (from-to) | 536-538 |
Number of pages | 3 |
Journal | Ieee Electron Device Letters |
Volume | 32 |
Issue number | 4 |
DOIs | |
State | Published - Apr 2011 |
Keywords
- InGaN
- patterned sapphire substrate (PSS)
- photovoltaic (PV)