Improved performance of NDLC poly-Si nanowire TFTs by using Ni-gettering

Bau Ming Wang; Tzu Ming Yang; Yew-Chuhg Wu; Chun Jung Su; Horng-Chih Lin

doi:10.1149/1.3481233

Improved performance of NDLC poly-Si nanowire TFTs by using Ni-gettering

Bau Ming Wang^*, Tzu Ming Yang, Yew-Chuhg Wu, Chun Jung Su, Horng-Chih Lin

^*Corresponding author for this work

Department of Materials Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Nickel contamination inside nickel-metal induced lateral crystallization polycrystalline silicon is an issue to fabricate high performance nanowire thin film transistors. The phosphorous-doped α-Si/chem-SiO₂ films were employed as Ni-gettering layers to investigate effect of Ni residues on the performance of NILC poly-Si NW TFTs. It was found that the performance of NW TFTs was greatly improved after Ni-gettering process.

Original language	English
Title of host publication	Thin Film Transistors 10, TFT 10
Publisher	Electrochemical Society Inc.
Pages	169-172
Number of pages	4
Edition	5
ISBN (Electronic)	9781607681748
ISBN (Print)	9781566778244
DOIs	https://doi.org/10.1149/1.3481233
State	Published - 2010

Publication series

Name	ECS Transactions
Number	5
Volume	33
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

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10.1149/1.3481233

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abstract = "Nickel contamination inside nickel-metal induced lateral crystallization polycrystalline silicon is an issue to fabricate high performance nanowire thin film transistors. The phosphorous-doped α-Si/chem-SiO2 films were employed as Ni-gettering layers to investigate effect of Ni residues on the performance of NILC poly-Si NW TFTs. It was found that the performance of NW TFTs was greatly improved after Ni-gettering process.",

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Improved performance of NDLC poly-Si nanowire TFTs by using Ni-gettering

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