Improved performance of NDLC poly-Si nanowire TFTs by using Ni-gettering

Bau Ming Wang; Tzu Ming Yang; Yew-Chuhg Wu; Chun Jung Su; Horng-Chih Lin

doi:10.1149/1.3481233

Improved performance of NDLC poly-Si nanowire TFTs by using Ni-gettering

Bau Ming Wang^*, Tzu Ming Yang, Yew-Chuhg Wu, Chun Jung Su, Horng-Chih Lin

^*Corresponding author for this work

Department of Materials Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Nickel contamination inside nickel-metal induced lateral crystallization polycrystalline silicon is an issue to fabricate high performance nanowire thin film transistors. The phosphorous-doped α-Si/chem-SiO₂ films were employed as Ni-gettering layers to investigate effect of Ni residues on the performance of NILC poly-Si NW TFTs. It was found that the performance of NW TFTs was greatly improved after Ni-gettering process.

Original language	English
Title of host publication	Thin Film Transistors 10, TFT 10
Pages	169-172
Number of pages	4
Edition	5
DOIs	https://doi.org/10.1149/1.3481233
State	Published - 1 Dec 2010
Event	10th Symposium on Thin Film Transistor Technologies, TFT 10 - 218th ECS Meeting - Las Vegas, NV, United States Duration: 11 Oct 2010 → 15 Oct 2010

Publication series

Name	ECS Transactions
Number	5
Volume	33
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Conference

Conference	10th Symposium on Thin Film Transistor Technologies, TFT 10 - 218th ECS Meeting
Country/Territory	United States
City	Las Vegas, NV
Period	11/10/10 → 15/10/10

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title = "Improved performance of NDLC poly-Si nanowire TFTs by using Ni-gettering",

abstract = "Nickel contamination inside nickel-metal induced lateral crystallization polycrystalline silicon is an issue to fabricate high performance nanowire thin film transistors. The phosphorous-doped α-Si/chem-SiO2 films were employed as Ni-gettering layers to investigate effect of Ni residues on the performance of NILC poly-Si NW TFTs. It was found that the performance of NW TFTs was greatly improved after Ni-gettering process.",

author = "Wang, {Bau Ming} and Yang, {Tzu Ming} and Yew-Chuhg Wu and Su, {Chun Jung} and Horng-Chih Lin",

year = "2010",

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doi = "10.1149/1.3481233",

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isbn = "9781566778244",

series = "ECS Transactions",

number = "5",

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Wang, BM, Yang, TM, Wu, Y-C, Su, CJ & Lin, H-C 2010, Improved performance of NDLC poly-Si nanowire TFTs by using Ni-gettering. in Thin Film Transistors 10, TFT 10. 5 edn, ECS Transactions, no. 5, vol. 33, pp. 169-172, 10th Symposium on Thin Film Transistor Technologies, TFT 10 - 218th ECS Meeting, Las Vegas, NV, United States, 11/10/10. https://doi.org/10.1149/1.3481233

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N2 - Nickel contamination inside nickel-metal induced lateral crystallization polycrystalline silicon is an issue to fabricate high performance nanowire thin film transistors. The phosphorous-doped α-Si/chem-SiO2 films were employed as Ni-gettering layers to investigate effect of Ni residues on the performance of NILC poly-Si NW TFTs. It was found that the performance of NW TFTs was greatly improved after Ni-gettering process.

AB - Nickel contamination inside nickel-metal induced lateral crystallization polycrystalline silicon is an issue to fabricate high performance nanowire thin film transistors. The phosphorous-doped α-Si/chem-SiO2 films were employed as Ni-gettering layers to investigate effect of Ni residues on the performance of NILC poly-Si NW TFTs. It was found that the performance of NW TFTs was greatly improved after Ni-gettering process.

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Improved performance of NDLC poly-Si nanowire TFTs by using Ni-gettering

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