Improved performance of F-ions-implanted poly-Si thin-film transistors using solid phase crystallization and excimer laser crystallization

Chun Hao Tu; Ting Chang Chang; Po-Tsun Liu; Che Yu Yang; Li Wei Feng; Chia Chou Tsai; Li Ting Chang; Yung Chun Wu; Simon M. Sze; Chun-Yen Chang

doi:10.1109/JDT.2006.890707

Improved performance of F-ions-implanted poly-Si thin-film transistors using solid phase crystallization and excimer laser crystallization

Chun Hao Tu^*, Ting Chang Chang, Po-Tsun Liu, Che Yu Yang, Li Wei Feng, Chia Chou Tsai, Li Ting Chang, Yung Chun Wu, Simon M. Sze, Chun-Yen Chang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

Polycrystalline silicon thin-film transistors (Poly-Si TFTs) with F-ions-implantation were investigated in this study. The electrical characteristics and reliability of the F-ions-implanted poly-Si TFTs were reported for solid phase crystallization (SPC) and excimer laser crystallization (ELC) methods respectively. The thermal annealing causes F-ions to pile up at the poly-Si interface, without the initial pad oxide deposition. With the introduction of fluorine in poly-Si film, the trap state density was effectively reduced. Also, the presence of strong Si-F bonds enhances electrical endurance against hot carrier impact by using F-ions-implantation. These improvements in electrical characteristics are even obvious for the ELC poly-Si TFTs compared to the SPC ones.

Original language	English
Pages (from-to)	45-49
Number of pages	5
Journal	IEEE/OSA Journal of Display Technology
Volume	3
Issue number	1
DOIs	https://doi.org/10.1109/JDT.2006.890707
State	Published - Mar 2007

Keywords

Excimer laser crystallization (ELC)
F-ions implant
Polycrystalline silicon thin-film transistors (poly-Si TFTs)
SPC

Access to Document

10.1109/JDT.2006.890707

Cite this

@article{b94b96bc2310443d8eeee112b0bac279,

title = "Improved performance of F-ions-implanted poly-Si thin-film transistors using solid phase crystallization and excimer laser crystallization",

abstract = "Polycrystalline silicon thin-film transistors (Poly-Si TFTs) with F-ions-implantation were investigated in this study. The electrical characteristics and reliability of the F-ions-implanted poly-Si TFTs were reported for solid phase crystallization (SPC) and excimer laser crystallization (ELC) methods respectively. The thermal annealing causes F-ions to pile up at the poly-Si interface, without the initial pad oxide deposition. With the introduction of fluorine in poly-Si film, the trap state density was effectively reduced. Also, the presence of strong Si-F bonds enhances electrical endurance against hot carrier impact by using F-ions-implantation. These improvements in electrical characteristics are even obvious for the ELC poly-Si TFTs compared to the SPC ones.",

keywords = "Excimer laser crystallization (ELC), F-ions implant, Polycrystalline silicon thin-film transistors (poly-Si TFTs), SPC",

author = "Tu, {Chun Hao} and Chang, {Ting Chang} and Po-Tsun Liu and Yang, {Che Yu} and Feng, {Li Wei} and Tsai, {Chia Chou} and Chang, {Li Ting} and Wu, {Yung Chun} and Sze, {Simon M.} and Chun-Yen Chang",

year = "2007",

month = mar,

doi = "10.1109/JDT.2006.890707",

language = "English",

volume = "3",

pages = "45--49",

journal = "IEEE/OSA Journal of Display Technology",

issn = "1551-319X",

publisher = "IEEE Computer Society",

number = "1",

}

TY - JOUR

T1 - Improved performance of F-ions-implanted poly-Si thin-film transistors using solid phase crystallization and excimer laser crystallization

AU - Tu, Chun Hao

AU - Chang, Ting Chang

AU - Liu, Po-Tsun

AU - Yang, Che Yu

AU - Feng, Li Wei

AU - Tsai, Chia Chou

AU - Chang, Li Ting

AU - Wu, Yung Chun

AU - Sze, Simon M.

AU - Chang, Chun-Yen

PY - 2007/3

Y1 - 2007/3

N2 - Polycrystalline silicon thin-film transistors (Poly-Si TFTs) with F-ions-implantation were investigated in this study. The electrical characteristics and reliability of the F-ions-implanted poly-Si TFTs were reported for solid phase crystallization (SPC) and excimer laser crystallization (ELC) methods respectively. The thermal annealing causes F-ions to pile up at the poly-Si interface, without the initial pad oxide deposition. With the introduction of fluorine in poly-Si film, the trap state density was effectively reduced. Also, the presence of strong Si-F bonds enhances electrical endurance against hot carrier impact by using F-ions-implantation. These improvements in electrical characteristics are even obvious for the ELC poly-Si TFTs compared to the SPC ones.

AB - Polycrystalline silicon thin-film transistors (Poly-Si TFTs) with F-ions-implantation were investigated in this study. The electrical characteristics and reliability of the F-ions-implanted poly-Si TFTs were reported for solid phase crystallization (SPC) and excimer laser crystallization (ELC) methods respectively. The thermal annealing causes F-ions to pile up at the poly-Si interface, without the initial pad oxide deposition. With the introduction of fluorine in poly-Si film, the trap state density was effectively reduced. Also, the presence of strong Si-F bonds enhances electrical endurance against hot carrier impact by using F-ions-implantation. These improvements in electrical characteristics are even obvious for the ELC poly-Si TFTs compared to the SPC ones.

KW - Excimer laser crystallization (ELC)

KW - F-ions implant

KW - Polycrystalline silicon thin-film transistors (poly-Si TFTs)

KW - SPC

UR - http://www.scopus.com/inward/record.url?scp=33847749373&partnerID=8YFLogxK

U2 - 10.1109/JDT.2006.890707

DO - 10.1109/JDT.2006.890707

M3 - Article

AN - SCOPUS:33847749373

SN - 1551-319X

VL - 3

SP - 45

EP - 49

JO - IEEE/OSA Journal of Display Technology

JF - IEEE/OSA Journal of Display Technology

IS - 1

ER -

Improved performance of F-ions-implanted poly-Si thin-film transistors using solid phase crystallization and excimer laser crystallization

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this