Improved Optoelectronic Performance of High-Voltage Ultraviolet Light-Emitting Diodes Through Electrode Designs

Ching Ho Tien; Chen Hao Kuo; Dong Sing Wuu; Ray-Hua Horng

doi:10.1109/TED.2017.2750704

Improved Optoelectronic Performance of High-Voltage Ultraviolet Light-Emitting Diodes Through Electrode Designs

Ching Ho Tien, Chen Hao Kuo, Dong Sing Wuu, Ray-Hua Horng^*

^*Corresponding author for this work

Institute of Electronics

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

High-efficiency high-voltage ultraviolet light-emitting diodes (HV-UVLEDs) consisting of a 4 × 4 microcells array with an area of 61 mil × 33 mil were designed and fabricated via the electrode pattern and interconnect technique. Polymer material was used to fill trench with planarization, and interconnection technology was used for metal layer connection to address wiring defect issue. In comparison with the conventional lateral UV-LED (C-UVLED), which had 33.6% and 34.7% enhancement in the light output power and wall-plug efficiency (at 1.5 W) of the HV-UVLEDs. A 56% improvement in the external quantum efficiency droop behavior was achieved for the HV-UVLEDs when compared with that of C-UVLED. This improvement can be attributed to superior current spreading in the HV-UVLED due to its smaller microcells, which increases light-emission efficiency overall.

Original language	English
Article number	8039416
Pages (from-to)	4526-4531
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	64
Issue number	11
DOIs	https://doi.org/10.1109/TED.2017.2750704
State	Published - Nov 2017

Keywords

High voltage (HV)
light-emitting diodes (LEDs)
ultraviolet (UV)

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title = "Improved Optoelectronic Performance of High-Voltage Ultraviolet Light-Emitting Diodes Through Electrode Designs",

abstract = "High-efficiency high-voltage ultraviolet light-emitting diodes (HV-UVLEDs) consisting of a 4 × 4 microcells array with an area of 61 mil × 33 mil were designed and fabricated via the electrode pattern and interconnect technique. Polymer material was used to fill trench with planarization, and interconnection technology was used for metal layer connection to address wiring defect issue. In comparison with the conventional lateral UV-LED (C-UVLED), which had 33.6% and 34.7% enhancement in the light output power and wall-plug efficiency (at 1.5 W) of the HV-UVLEDs. A 56% improvement in the external quantum efficiency droop behavior was achieved for the HV-UVLEDs when compared with that of C-UVLED. This improvement can be attributed to superior current spreading in the HV-UVLED due to its smaller microcells, which increases light-emission efficiency overall.",

keywords = "High voltage (HV), light-emitting diodes (LEDs), ultraviolet (UV)",

author = "Tien, {Ching Ho} and Kuo, {Chen Hao} and Wuu, {Dong Sing} and Ray-Hua Horng",

note = "Publisher Copyright: {\textcopyright} 2017 IEEE.",

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doi = "10.1109/TED.2017.2750704",

language = "English",

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AU - Tien, Ching Ho

AU - Kuo, Chen Hao

AU - Wuu, Dong Sing

AU - Horng, Ray-Hua

PY - 2017/11

Y1 - 2017/11

N2 - High-efficiency high-voltage ultraviolet light-emitting diodes (HV-UVLEDs) consisting of a 4 × 4 microcells array with an area of 61 mil × 33 mil were designed and fabricated via the electrode pattern and interconnect technique. Polymer material was used to fill trench with planarization, and interconnection technology was used for metal layer connection to address wiring defect issue. In comparison with the conventional lateral UV-LED (C-UVLED), which had 33.6% and 34.7% enhancement in the light output power and wall-plug efficiency (at 1.5 W) of the HV-UVLEDs. A 56% improvement in the external quantum efficiency droop behavior was achieved for the HV-UVLEDs when compared with that of C-UVLED. This improvement can be attributed to superior current spreading in the HV-UVLED due to its smaller microcells, which increases light-emission efficiency overall.

AB - High-efficiency high-voltage ultraviolet light-emitting diodes (HV-UVLEDs) consisting of a 4 × 4 microcells array with an area of 61 mil × 33 mil were designed and fabricated via the electrode pattern and interconnect technique. Polymer material was used to fill trench with planarization, and interconnection technology was used for metal layer connection to address wiring defect issue. In comparison with the conventional lateral UV-LED (C-UVLED), which had 33.6% and 34.7% enhancement in the light output power and wall-plug efficiency (at 1.5 W) of the HV-UVLEDs. A 56% improvement in the external quantum efficiency droop behavior was achieved for the HV-UVLEDs when compared with that of C-UVLED. This improvement can be attributed to superior current spreading in the HV-UVLED due to its smaller microcells, which increases light-emission efficiency overall.

KW - High voltage (HV)

KW - light-emitting diodes (LEDs)

KW - ultraviolet (UV)

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Improved Optoelectronic Performance of High-Voltage Ultraviolet Light-Emitting Diodes Through Electrode Designs

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Keywords

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