Keyphrases
Plasma-enhanced Chemical Vapor Deposition (PECVD)
100%
Silica
100%
Si Nanocrystals
100%
Near-infrared Luminescence
100%
Silicon Oxide
80%
Photoluminescence
60%
Annealing
40%
Photoluminescence Intensity
40%
Blue Shift
40%
Annealing Time
40%
Nc-Si
40%
Growth Conditions
20%
Oxygen Atom
20%
Long Wavelength
20%
Dissolved Oxygen
20%
Room-temperature Photoluminescence
20%
Optimized Growth
20%
Oxide Thin Films
20%
Silicon-rich
20%
Luminescence Lifetime
20%
Oxidation Effect
20%
Substoichiometric
20%
Physics
Vapor Deposition
100%
Near Infrared
100%
Nitrous Oxide
100%
Fluence
100%
Blood Plasma
100%
Photoluminescence
60%
Silicon Oxide
40%
Oxygen Atom
10%
Thin Films
10%
Room Temperature
10%
Engineering
Chemical Vapor Deposition
100%
Vapor Deposition
100%
Silicon Oxide
100%
Silicon Dioxide
100%
Blueshift
50%
Annealing Time
50%
Thin Films
25%
Room Temperature
25%
Growth Condition
25%
Oxidation Effect
25%
Oxygen Atom
25%
Material Science
Photoluminescence
100%
Luminescence
100%
Plasma-Enhanced Chemical Vapor Deposition
100%
Silicon
83%
Oxide Compound
66%
Thin Films
16%
Oxidation Reaction
16%
Chemistry
Nitrous Oxide
100%
Plasma Enhanced Chemical Vapor Deposition
100%
Nanocrystalline Material
100%
Photoluminescence
60%
Silicon Oxide
40%
Ambient Reaction Temperature
10%
Silicon
10%
Luminiscence Type
10%
Oxygen Atom
10%