Abstract
In this paper we investigated the effect of Cu bonding quality on inter-level via structural reliability for 3D manufacturing applications. We developed a Cu bond pad structure and fabrication process for improved bonding quality by recessing oxides using a combination of SiO2 CMP process and dilute HF wet etching. In addition, in order to achieve improved wafer-level bonding, we introduced a seal design concept that prevents corrosion and provides extra mechanical support. Demonstrations of these concepts and processes prove the feasibility of reliable and manufacturable 3D integrated circuits and packages.
Original language | English |
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Pages | 195-202 |
Number of pages | 8 |
State | Published - Sep 2006 |
Event | 23rd International VLSI Multilevel Interconnection Conference, VMIC 2006 - Fremont, CA, United States Duration: 26 Sep 2006 → 28 Sep 2006 |
Conference
Conference | 23rd International VLSI Multilevel Interconnection Conference, VMIC 2006 |
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Country/Territory | United States |
City | Fremont, CA |
Period | 26/09/06 → 28/09/06 |