Improved manufacturability of Cu bond pads and implementation of seal design in 3D integrated circuits and packages

Kuan-Neng Chen, C. K. Tsang, A. W. Topol, S. H. Lee, B. K. Furraan, D. L. Rath, J. Q. Lu, A. M. Young, S. Purushothaman, W. Haensch

    Research output: Contribution to conferencePaperpeer-review

    10 Scopus citations

    Abstract

    In this paper we investigated the effect of Cu bonding quality on inter-level via structural reliability for 3D manufacturing applications. We developed a Cu bond pad structure and fabrication process for improved bonding quality by recessing oxides using a combination of SiO2 CMP process and dilute HF wet etching. In addition, in order to achieve improved wafer-level bonding, we introduced a seal design concept that prevents corrosion and provides extra mechanical support. Demonstrations of these concepts and processes prove the feasibility of reliable and manufacturable 3D integrated circuits and packages.

    Original languageEnglish
    Pages195-202
    Number of pages8
    StatePublished - Sep 2006
    Event23rd International VLSI Multilevel Interconnection Conference, VMIC 2006 - Fremont, CA, United States
    Duration: 26 Sep 200628 Sep 2006

    Conference

    Conference23rd International VLSI Multilevel Interconnection Conference, VMIC 2006
    Country/TerritoryUnited States
    CityFremont, CA
    Period26/09/0628/09/06

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