Improved low temperature characteristics of p-channel MOSFETs with Si _1-xGe _x raised source and drain

Keyphrases

• MOSFET 100%
• P-channel 100%
• Raised Source 100%
• Low-temperature Characteristics 100%
• Sheet Resistance 16%
• High Vacuum Chemical Vapor Deposition 16%
• Channel Length 16%
• Temperature Measurement 16%
• Shallow Junction 16%
• Drain Induced Barrier Lowering 16%
• Off-state Leakage Current 16%
• Specific Contact Resistance 16%
• Device Performance 16%
• Short Channel 16%
• Channel Characteristics 16%
• Well-behaved 16%
• Implantation Damage 16%
• Low Temperature Applications 16%
• High Temperature Sensitivity 16%
• Performance at Low Temperature 16%
• Improved Transconductance 16%

Engineering

• Low-Temperature 100%
• Metal-Oxide-Semiconductor Field-Effect Transistor 100%
• Deposition System 50%
• Chemical Vapor Deposition 50%
• Vapor Deposition 50%
• Channel Length 50%
• Shallow Junction 50%
• Device Performance 50%
• Sheet Resistance 50%
• Low Temperature Application 50%

Material Science

• Metal-Oxide-Semiconductor Field-Effect Transistor 100%
• Chemical Vapor Deposition 50%
• Contact Resistance 50%