Improved I-V model of small geometry MOSFETs for SPICE

Steve S. Chung; T. S. Lin; Y. G. Chen

Improved I-V model of small geometry MOSFETs for SPICE

Steve S. Chung^*, T. S. Lin, Y. G. Chen

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

Abstract

A description is given of a computationally efficient SPICE model for accurate prediction of the I-V and threshold voltage characteristics of small-geometry MOSFETs. The model based on an enhancement of the SPICE LEVEL3 MOS model and a novel approach of parameter extraction. The expressions achieved for the drain currents hold in the weak inversion, strong inversion, and saturation regimes of operation. The model supports the design of both short-channel and narrow-gate MOSFETs with any kind of implanted channel. Accuracy and benchmark tests show substantial improvements over the original LEVEL3 model.

Original language	English
Journal	Proceedings of the Custom Integrated Circuits Conference
State	Published - 1 May 1989
Event	Proceedings of the IEEE 1989 Custom Integrated Circuits Conference - San Diego, CA, SA Duration: 15 May 1989 → 18 May 1989

Cite this

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title = "Improved I-V model of small geometry MOSFETs for SPICE",

abstract = "A description is given of a computationally efficient SPICE model for accurate prediction of the I-V and threshold voltage characteristics of small-geometry MOSFETs. The model based on an enhancement of the SPICE LEVEL3 MOS model and a novel approach of parameter extraction. The expressions achieved for the drain currents hold in the weak inversion, strong inversion, and saturation regimes of operation. The model supports the design of both short-channel and narrow-gate MOSFETs with any kind of implanted channel. Accuracy and benchmark tests show substantial improvements over the original LEVEL3 model.",

author = "Chung, {Steve S.} and Lin, {T. S.} and Chen, {Y. G.}",

year = "1989",

month = may,

day = "1",

language = "English",

journal = "Proceedings of the Custom Integrated Circuits Conference",

issn = "0886-5930",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "null ; Conference date: 15-05-1989 Through 18-05-1989",

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TY - JOUR

T1 - Improved I-V model of small geometry MOSFETs for SPICE

AU - Chung, Steve S.

AU - Lin, T. S.

AU - Chen, Y. G.

PY - 1989/5/1

Y1 - 1989/5/1

N2 - A description is given of a computationally efficient SPICE model for accurate prediction of the I-V and threshold voltage characteristics of small-geometry MOSFETs. The model based on an enhancement of the SPICE LEVEL3 MOS model and a novel approach of parameter extraction. The expressions achieved for the drain currents hold in the weak inversion, strong inversion, and saturation regimes of operation. The model supports the design of both short-channel and narrow-gate MOSFETs with any kind of implanted channel. Accuracy and benchmark tests show substantial improvements over the original LEVEL3 model.

AB - A description is given of a computationally efficient SPICE model for accurate prediction of the I-V and threshold voltage characteristics of small-geometry MOSFETs. The model based on an enhancement of the SPICE LEVEL3 MOS model and a novel approach of parameter extraction. The expressions achieved for the drain currents hold in the weak inversion, strong inversion, and saturation regimes of operation. The model supports the design of both short-channel and narrow-gate MOSFETs with any kind of implanted channel. Accuracy and benchmark tests show substantial improvements over the original LEVEL3 model.

UR - http://www.scopus.com/inward/record.url?scp=0024664993&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0024664993

JO - Proceedings of the Custom Integrated Circuits Conference

JF - Proceedings of the Custom Integrated Circuits Conference

SN - 0886-5930

Y2 - 15 May 1989 through 18 May 1989

ER -

Improved I-V model of small geometry MOSFETs for SPICE

Abstract

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