A periodic GaAs wafer-bonded structure has been proposed for quasi-phase-matched (QPM) second harmonic generation (SHG). However, the current bonding technology which involves elevated temperatures and pressures often leads to unacceptable optical losses and poor device performance. Three sources of optical losses were investigated: incongruent evaporation at exposed surfaces, interfacial defects between the bonded wafers, and bulk defects within the wafers. Ultimately, a procedure was developed to fabricate a low-loss optical stack of 39 (110)-oriented wafers to permit SHG applications.
|Number of pages||2|
|Journal||Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS|
|State||Published - 1 Jan 1997|
|Event||Proceedings of the 1997 Conference on Lasers and Electro-Optics, CLEO - Baltimore, MD, USA|
Duration: 18 May 1997 → 23 May 1997