Improved GaAs wafer bonding process for quasi-phase-matched (QPM) second harmonic generation (SHG)

Yew-Chuhg Wu; Robert S. Feigelson; Roger K. Route; Dong Zheng; Leslie A. Gordon; Martin M. Fejer; Robert L. Byer

doi:10.1109/CLEO.1997.603421

Improved GaAs wafer bonding process for quasi-phase-matched (QPM) second harmonic generation (SHG)

Yew-Chuhg Wu^*, Robert S. Feigelson, Roger K. Route, Dong Zheng, Leslie A. Gordon, Martin M. Fejer, Robert L. Byer

^*Corresponding author for this work

Department of Materials Science and Engineering

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

A periodic GaAs wafer-bonded structure has been proposed for quasi-phase-matched (QPM) second harmonic generation (SHG). However, the current bonding technology which involves elevated temperatures and pressures often leads to unacceptable optical losses and poor device performance. Three sources of optical losses were investigated: incongruent evaporation at exposed surfaces, interfacial defects between the bonded wafers, and bulk defects within the wafers. Ultimately, a procedure was developed to fabricate a low-loss optical stack of 39 (110)-oriented wafers to permit SHG applications.

Original language	English
Pages (from-to)	451-452
Number of pages	2
Journal	Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Volume	11
DOIs	https://doi.org/10.1109/CLEO.1997.603421
State	Published - 1 Jan 1997
Event	Proceedings of the 1997 Conference on Lasers and Electro-Optics, CLEO - Baltimore, MD, USA Duration: 18 May 1997 → 23 May 1997

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10.1109/CLEO.1997.603421

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@article{58af8f16ac8649d383aa7cb520879e73,

title = "Improved GaAs wafer bonding process for quasi-phase-matched (QPM) second harmonic generation (SHG)",

abstract = "A periodic GaAs wafer-bonded structure has been proposed for quasi-phase-matched (QPM) second harmonic generation (SHG). However, the current bonding technology which involves elevated temperatures and pressures often leads to unacceptable optical losses and poor device performance. Three sources of optical losses were investigated: incongruent evaporation at exposed surfaces, interfacial defects between the bonded wafers, and bulk defects within the wafers. Ultimately, a procedure was developed to fabricate a low-loss optical stack of 39 (110)-oriented wafers to permit SHG applications.",

author = "Yew-Chuhg Wu and Feigelson, {Robert S.} and Route, {Roger K.} and Dong Zheng and Gordon, {Leslie A.} and Fejer, {Martin M.} and Byer, {Robert L.}",

year = "1997",

month = jan,

day = "1",

doi = "10.1109/CLEO.1997.603421",

language = "English",

volume = "11",

pages = "451--452",

journal = "Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS",

issn = "1092-8081",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "null ; Conference date: 18-05-1997 Through 23-05-1997",

}

TY - JOUR

T1 - Improved GaAs wafer bonding process for quasi-phase-matched (QPM) second harmonic generation (SHG)

AU - Wu, Yew-Chuhg

AU - Feigelson, Robert S.

AU - Route, Roger K.

AU - Zheng, Dong

AU - Gordon, Leslie A.

AU - Fejer, Martin M.

AU - Byer, Robert L.

PY - 1997/1/1

Y1 - 1997/1/1

N2 - A periodic GaAs wafer-bonded structure has been proposed for quasi-phase-matched (QPM) second harmonic generation (SHG). However, the current bonding technology which involves elevated temperatures and pressures often leads to unacceptable optical losses and poor device performance. Three sources of optical losses were investigated: incongruent evaporation at exposed surfaces, interfacial defects between the bonded wafers, and bulk defects within the wafers. Ultimately, a procedure was developed to fabricate a low-loss optical stack of 39 (110)-oriented wafers to permit SHG applications.

AB - A periodic GaAs wafer-bonded structure has been proposed for quasi-phase-matched (QPM) second harmonic generation (SHG). However, the current bonding technology which involves elevated temperatures and pressures often leads to unacceptable optical losses and poor device performance. Three sources of optical losses were investigated: incongruent evaporation at exposed surfaces, interfacial defects between the bonded wafers, and bulk defects within the wafers. Ultimately, a procedure was developed to fabricate a low-loss optical stack of 39 (110)-oriented wafers to permit SHG applications.

UR - http://www.scopus.com/inward/record.url?scp=0030643171&partnerID=8YFLogxK

U2 - 10.1109/CLEO.1997.603421

DO - 10.1109/CLEO.1997.603421

M3 - Conference article

AN - SCOPUS:0030643171

SN - 1092-8081

VL - 11

SP - 451

EP - 452

JO - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

JF - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

Y2 - 18 May 1997 through 23 May 1997

ER -

Improved GaAs wafer bonding process for quasi-phase-matched (QPM) second harmonic generation (SHG)

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