TY - JOUR
T1 - Improved GaAs wafer bonding process for quasi-phase-matched (QPM) second harmonic generation (SHG)
AU - Wu, Yew-Chuhg
AU - Feigelson, Robert S.
AU - Route, Roger K.
AU - Zheng, Dong
AU - Gordon, Leslie A.
AU - Fejer, Martin M.
AU - Byer, Robert L.
PY - 1997/1/1
Y1 - 1997/1/1
N2 - A periodic GaAs wafer-bonded structure has been proposed for quasi-phase-matched (QPM) second harmonic generation (SHG). However, the current bonding technology which involves elevated temperatures and pressures often leads to unacceptable optical losses and poor device performance. Three sources of optical losses were investigated: incongruent evaporation at exposed surfaces, interfacial defects between the bonded wafers, and bulk defects within the wafers. Ultimately, a procedure was developed to fabricate a low-loss optical stack of 39 (110)-oriented wafers to permit SHG applications.
AB - A periodic GaAs wafer-bonded structure has been proposed for quasi-phase-matched (QPM) second harmonic generation (SHG). However, the current bonding technology which involves elevated temperatures and pressures often leads to unacceptable optical losses and poor device performance. Three sources of optical losses were investigated: incongruent evaporation at exposed surfaces, interfacial defects between the bonded wafers, and bulk defects within the wafers. Ultimately, a procedure was developed to fabricate a low-loss optical stack of 39 (110)-oriented wafers to permit SHG applications.
UR - http://www.scopus.com/inward/record.url?scp=0030643171&partnerID=8YFLogxK
U2 - 10.1109/CLEO.1997.603421
DO - 10.1109/CLEO.1997.603421
M3 - Conference article
AN - SCOPUS:0030643171
SN - 1092-8081
VL - 11
SP - 451
EP - 452
JO - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
JF - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
T2 - Proceedings of the 1997 Conference on Lasers and Electro-Optics, CLEO
Y2 - 18 May 1997 through 23 May 1997
ER -