Improved flash cell performance by N2O annealing of interpoly oxide

Fuh Cheng Jong*, Tiao Yuan Huang, Tien-Sheng Chao, Horng-Chih Lin, Len Yi Leu, Konrad Young, Chen Hsi Lin, Kuang Y. Chiu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

In this letter, we report the effects of N2O annealing of interpoly oxide on flash cell performance. It is demonstrated that by adding an N2O anneal after interpoly oxide formation, improved cycling endurance is achieved. The program and erase efficiencies are also improved significantly, compared to the control cell without N2O anneal. The cells with N2O anneal show higher cell current (i.e., drain current), which can be ascribed to a lower threshold voltage and higher transconductance, compared to the control cell.

Original languageEnglish
Pages (from-to)343-345
Number of pages3
JournalIEEE Electron Device Letters
Volume18
Issue number7
DOIs
StatePublished - 1 Jul 1997

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