Improved flash cell performance by N2O annealing of interpoly oxide

Fuh Cheng Jong; Tiao Yuan Huang; Tien-Sheng Chao; Horng-Chih Lin; Len Yi Leu; Konrad Young; Chen Hsi Lin; Kuang Y. Chiu

doi:10.1109/55.596931

Improved flash cell performance by N₂O annealing of interpoly oxide

Fuh Cheng Jong^*, Tiao Yuan Huang, Tien-Sheng Chao, Horng-Chih Lin, Len Yi Leu, Konrad Young, Chen Hsi Lin, Kuang Y. Chiu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

In this letter, we report the effects of N₂O annealing of interpoly oxide on flash cell performance. It is demonstrated that by adding an N₂O anneal after interpoly oxide formation, improved cycling endurance is achieved. The program and erase efficiencies are also improved significantly, compared to the control cell without N₂O anneal. The cells with N₂O anneal show higher cell current (i.e., drain current), which can be ascribed to a lower threshold voltage and higher transconductance, compared to the control cell.

Original language	English
Pages (from-to)	343-345
Number of pages	3
Journal	Ieee Electron Device Letters
Volume	18
Issue number	7
DOIs	https://doi.org/10.1109/55.596931
State	Published - Jul 1997

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abstract = "In this letter, we report the effects of N2O annealing of interpoly oxide on flash cell performance. It is demonstrated that by adding an N2O anneal after interpoly oxide formation, improved cycling endurance is achieved. The program and erase efficiencies are also improved significantly, compared to the control cell without N2O anneal. The cells with N2O anneal show higher cell current (i.e., drain current), which can be ascribed to a lower threshold voltage and higher transconductance, compared to the control cell.",

author = "Jong, {Fuh Cheng} and Huang, {Tiao Yuan} and Tien-Sheng Chao and Horng-Chih Lin and Leu, {Len Yi} and Konrad Young and Lin, {Chen Hsi} and Chiu, {Kuang Y.}",

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AU - Jong, Fuh Cheng

AU - Huang, Tiao Yuan

AU - Chao, Tien-Sheng

AU - Lin, Horng-Chih

AU - Leu, Len Yi

AU - Young, Konrad

AU - Lin, Chen Hsi

AU - Chiu, Kuang Y.

PY - 1997/7

Y1 - 1997/7

N2 - In this letter, we report the effects of N2O annealing of interpoly oxide on flash cell performance. It is demonstrated that by adding an N2O anneal after interpoly oxide formation, improved cycling endurance is achieved. The program and erase efficiencies are also improved significantly, compared to the control cell without N2O anneal. The cells with N2O anneal show higher cell current (i.e., drain current), which can be ascribed to a lower threshold voltage and higher transconductance, compared to the control cell.

AB - In this letter, we report the effects of N2O annealing of interpoly oxide on flash cell performance. It is demonstrated that by adding an N2O anneal after interpoly oxide formation, improved cycling endurance is achieved. The program and erase efficiencies are also improved significantly, compared to the control cell without N2O anneal. The cells with N2O anneal show higher cell current (i.e., drain current), which can be ascribed to a lower threshold voltage and higher transconductance, compared to the control cell.

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SP - 343

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JO - Ieee Electron Device Letters

JF - Ieee Electron Device Letters

IS - 7

ER -

Improved flash cell performance by N₂O annealing of interpoly oxide

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