TY - GEN
T1 - Improved ESD Protection Design for High-Frequency Applications in CMOS Technology
AU - Lin, Meng Ting
AU - Lin, Chun Yu
N1 - Publisher Copyright:
© 2018 IEEE.
PY - 2018/10/25
Y1 - 2018/10/25
N2 - An improved electrostatic discharge (ESD) protection design by using stacked diodes and silicon-controlled rectifier (SCR) as power-rail ESD clamp circuit is presented to protect the high-frequency integrated circuits in CMOS process. Experimental results show that the improved design can achieve higher ESD robustness without degrading the high-frequency performance. Based on its good performances during ESD stress and high-frequency operating conditions, the improved design is very suitable for ESD protection.
AB - An improved electrostatic discharge (ESD) protection design by using stacked diodes and silicon-controlled rectifier (SCR) as power-rail ESD clamp circuit is presented to protect the high-frequency integrated circuits in CMOS process. Experimental results show that the improved design can achieve higher ESD robustness without degrading the high-frequency performance. Based on its good performances during ESD stress and high-frequency operating conditions, the improved design is very suitable for ESD protection.
UR - http://www.scopus.com/inward/record.url?scp=85056848006&partnerID=8YFLogxK
U2 - 10.1109/IRMMW-THz.2018.8509852
DO - 10.1109/IRMMW-THz.2018.8509852
M3 - Conference contribution
AN - SCOPUS:85056848006
T3 - International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz
BT - 2018 43rd International Conference on Infrared Millimeter and Terahertz Waves, IRMMW-THz 2018
PB - IEEE Computer Society
T2 - 43rd International Conference on Infrared Millimeter and Terahertz Waves, IRMMW-THz 2018
Y2 - 9 September 2018 through 14 September 2018
ER -