Improved electrical properties of Gd2 O3 GaAs capacitor with modified wet-chemical clean and sulfidization procedures

Keyphrases

• Alkaline Solution 33%
• Arsenic Segregation 33%
• Capacitors 100%
• Charge Trapping 33%
• Dielectric Thin Films 33%
• Electrical Characteristics 33%
• Electrical Properties 100%
• Elemental Arsenic 33%
• Fermi-level pinning Effect 33%
• Frequency Dispersion 33%
• GaAs Structure 33%
• GaAs Substrate 33%
• GaAs Surface 33%
• Gallium Arsenide 100%
• Gate Leakage 33%
• Gate Voltage 33%
• Gd2O3 100%
• Interfacial Layer 33%
• Native Oxide 33%
• Oxide Capacitance 33%
• Oxides 33%
• Rinsing 33%
• S-passivation 33%
• SiGe 33%
• Sulfidization 100%
• Sulfur 33%
• Ultrathin 33%
• Wet Chemical Method 100%
• X-ray Photoelectron Spectroscopy Analysis 33%

Engineering

• Alkaline Solution 20%
• Arsenic 40%
• Clean Chemical 100%
• Dielectrics 20%
• Fermi Level 20%
• Frequency Dispersion 20%
• Gaas Substrate 20%
• Gallium Arsenide 100%
• Gate Voltage 20%
• Interfacial Layer 20%
• Passivation 20%
• Ray Photoelectron Spectroscopy 20%
• Thin Films 20%

Material Science

• Arsenic 33%
• Capacitance 16%
• Capacitor 100%
• Charge Trapping 16%
• Dielectric Material 16%
• Electrical Property 16%
• Gallium Arsenide 100%
• Oxide Compound 50%
• Surface (Surface Science) 33%
• Thin Films 16%
• X-Ray Photoelectron Spectroscopy 16%