Improved electrical performance of NILC poly-Si TFTs manufactured using H2SO4 and HCl solution

Yu Chung Chen; Yu Cheng Chao; Yew-Chuhg Wu

doi:10.1149/1.3481232

Improved electrical performance of NILC poly-Si TFTs manufactured using H₂SO₄ and HCl solution

Yu Chung Chen^*, Yu Cheng Chao, Yew-Chuhg Wu

^*Corresponding author for this work

Department of Materials Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Scopus citations

Abstract

In this study, we fabricated a NILC surface on a SiO₂-coated silicon wafer, and then used HCl solution and H₂SO₄ + H₂O₂ solution to do surface treatment. The treatment could reduce Ni or NiSi₂ that was trapped at the surface of silicon and therefore the electrical characteristics of these devices were improved.

Original language	English
Title of host publication	Thin Film Transistors 10, TFT 10
Pages	165-168
Number of pages	4
Edition	5
DOIs	https://doi.org/10.1149/1.3481232
State	Published - 1 Dec 2010
Event	10th Symposium on Thin Film Transistor Technologies, TFT 10 - 218th ECS Meeting - Las Vegas, NV, United States Duration: 11 Oct 2010 → 15 Oct 2010

Publication series

Name	ECS Transactions
Number	5
Volume	33
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Conference

Conference	10th Symposium on Thin Film Transistor Technologies, TFT 10 - 218th ECS Meeting
Country/Territory	United States
City	Las Vegas, NV
Period	11/10/10 → 15/10/10

Access to Document

10.1149/1.3481232

Cite this

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title = "Improved electrical performance of NILC poly-Si TFTs manufactured using H2SO4 and HCl solution",

abstract = "In this study, we fabricated a NILC surface on a SiO2-coated silicon wafer, and then used HCl solution and H2SO4 + H2O2 solution to do surface treatment. The treatment could reduce Ni or NiSi2 that was trapped at the surface of silicon and therefore the electrical characteristics of these devices were improved.",

author = "Chen, {Yu Chung} and Chao, {Yu Cheng} and Yew-Chuhg Wu",

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month = dec,

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doi = "10.1149/1.3481232",

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note = "10th Symposium on Thin Film Transistor Technologies, TFT 10 - 218th ECS Meeting ; Conference date: 11-10-2010 Through 15-10-2010",

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Chen, YC, Chao, YC & Wu, Y-C 2010, Improved electrical performance of NILC poly-Si TFTs manufactured using H₂SO₄ and HCl solution. in Thin Film Transistors 10, TFT 10. 5 edn, ECS Transactions, no. 5, vol. 33, pp. 165-168, 10th Symposium on Thin Film Transistor Technologies, TFT 10 - 218th ECS Meeting, Las Vegas, NV, United States, 11/10/10. https://doi.org/10.1149/1.3481232

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Y1 - 2010/12/1

N2 - In this study, we fabricated a NILC surface on a SiO2-coated silicon wafer, and then used HCl solution and H2SO4 + H2O2 solution to do surface treatment. The treatment could reduce Ni or NiSi2 that was trapped at the surface of silicon and therefore the electrical characteristics of these devices were improved.

AB - In this study, we fabricated a NILC surface on a SiO2-coated silicon wafer, and then used HCl solution and H2SO4 + H2O2 solution to do surface treatment. The treatment could reduce Ni or NiSi2 that was trapped at the surface of silicon and therefore the electrical characteristics of these devices were improved.

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