Improved Electrical Characteristics of Ge p-MOSFET with Ti-GeOx Interfacial Layer by in-situ Plasma-enhanced Atomic Layer Deposition

Hui Hsuan Li; Yu Hsien Lin; Tsung Yen Tu; Chao Hsin Chien

doi:10.1109/EDTM55494.2023.10102932

Improved Electrical Characteristics of Ge p-MOSFET with Ti-GeOx Interfacial Layer by in-situ Plasma-enhanced Atomic Layer Deposition

Hui Hsuan Li, Yu Hsien Lin^*, Tsung Yen Tu, Chao Hsin Chien^*

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

In this study, we successfully investigated Hf-based gate stacks with Ti-GeOx interfacial layer (IL) on a Ge channel p-MOSFET. The results revealed that thicker TiGeOx ILs could reduce interface trap density and leakage current. The X-ray photoelectron spectroscopy (XPS) analyses indicated fewer Ge-O bonds and O-Ge-O bonds but more Ti-GeOx bonds when the IL was thicker. Meanwhile, lower leakage current and higher mobility were observed by using Hf-based gate stack with Ti-GeOx IL on a Ge channel p-MOSFET.

Original language	English
Title of host publication	7th IEEE Electron Devices Technology and Manufacturing Conference
Subtitle of host publication	Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9798350332520
DOIs	https://doi.org/10.1109/EDTM55494.2023.10102932
State	Published - 2023
Event	7th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2023 - Seoul, Korea, Republic of Duration: 7 Mar 2023 → 10 Mar 2023

Publication series

Name	7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023

Conference

Conference	7th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2023
Country/Territory	Korea, Republic of
City	Seoul
Period	7/03/23 → 10/03/23

Keywords

Germanium
germanium oxide
in situ
interfacial layer (IL)
plasma-enhanced atomic layer deposition (PEALD)
pMOSFET

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10.1109/EDTM55494.2023.10102932

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Li, H. H., Lin, Y. H., Tu, T. Y., & Chien, C. H. (2023). Improved Electrical Characteristics of Ge p-MOSFET with Ti-GeOx Interfacial Layer by in-situ Plasma-enhanced Atomic Layer Deposition. In 7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023 (7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDTM55494.2023.10102932

Li, Hui Hsuan ; Lin, Yu Hsien ; Tu, Tsung Yen et al. / Improved Electrical Characteristics of Ge p-MOSFET with Ti-GeOx Interfacial Layer by in-situ Plasma-enhanced Atomic Layer Deposition. 7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023. Institute of Electrical and Electronics Engineers Inc., 2023. (7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023).

@inproceedings{ca5112d005254e1789fefd402fac473b,

title = "Improved Electrical Characteristics of Ge p-MOSFET with Ti-GeOx Interfacial Layer by in-situ Plasma-enhanced Atomic Layer Deposition",

abstract = "In this study, we successfully investigated Hf-based gate stacks with Ti-GeOx interfacial layer (IL) on a Ge channel p-MOSFET. The results revealed that thicker TiGeOx ILs could reduce interface trap density and leakage current. The X-ray photoelectron spectroscopy (XPS) analyses indicated fewer Ge-O bonds and O-Ge-O bonds but more Ti-GeOx bonds when the IL was thicker. Meanwhile, lower leakage current and higher mobility were observed by using Hf-based gate stack with Ti-GeOx IL on a Ge channel p-MOSFET.",

keywords = "Germanium, germanium oxide, in situ, interfacial layer (IL), plasma-enhanced atomic layer deposition (PEALD), pMOSFET",

author = "Li, {Hui Hsuan} and Lin, {Yu Hsien} and Tu, {Tsung Yen} and Chien, {Chao Hsin}",

note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 7th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2023 ; Conference date: 07-03-2023 Through 10-03-2023",

year = "2023",

doi = "10.1109/EDTM55494.2023.10102932",

language = "English",

series = "7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "7th IEEE Electron Devices Technology and Manufacturing Conference",

address = "United States",

}

Li, HH, Lin, YH, Tu, TY & Chien, CH 2023, Improved Electrical Characteristics of Ge p-MOSFET with Ti-GeOx Interfacial Layer by in-situ Plasma-enhanced Atomic Layer Deposition. in 7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023. 7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023, Institute of Electrical and Electronics Engineers Inc., 7th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2023, Seoul, Korea, Republic of, 7/03/23. https://doi.org/10.1109/EDTM55494.2023.10102932

Improved Electrical Characteristics of Ge p-MOSFET with Ti-GeOx Interfacial Layer by in-situ Plasma-enhanced Atomic Layer Deposition. / Li, Hui Hsuan; Lin, Yu Hsien; Tu, Tsung Yen et al.
7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023. Institute of Electrical and Electronics Engineers Inc., 2023. (7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Improved Electrical Characteristics of Ge p-MOSFET with Ti-GeOx Interfacial Layer by in-situ Plasma-enhanced Atomic Layer Deposition

AU - Li, Hui Hsuan

AU - Lin, Yu Hsien

AU - Tu, Tsung Yen

AU - Chien, Chao Hsin

PY - 2023

Y1 - 2023

N2 - In this study, we successfully investigated Hf-based gate stacks with Ti-GeOx interfacial layer (IL) on a Ge channel p-MOSFET. The results revealed that thicker TiGeOx ILs could reduce interface trap density and leakage current. The X-ray photoelectron spectroscopy (XPS) analyses indicated fewer Ge-O bonds and O-Ge-O bonds but more Ti-GeOx bonds when the IL was thicker. Meanwhile, lower leakage current and higher mobility were observed by using Hf-based gate stack with Ti-GeOx IL on a Ge channel p-MOSFET.

AB - In this study, we successfully investigated Hf-based gate stacks with Ti-GeOx interfacial layer (IL) on a Ge channel p-MOSFET. The results revealed that thicker TiGeOx ILs could reduce interface trap density and leakage current. The X-ray photoelectron spectroscopy (XPS) analyses indicated fewer Ge-O bonds and O-Ge-O bonds but more Ti-GeOx bonds when the IL was thicker. Meanwhile, lower leakage current and higher mobility were observed by using Hf-based gate stack with Ti-GeOx IL on a Ge channel p-MOSFET.

KW - Germanium

KW - germanium oxide

KW - in situ

KW - interfacial layer (IL)

KW - plasma-enhanced atomic layer deposition (PEALD)

KW - pMOSFET

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U2 - 10.1109/EDTM55494.2023.10102932

DO - 10.1109/EDTM55494.2023.10102932

M3 - Conference contribution

AN - SCOPUS:85158099421

T3 - 7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023

BT - 7th IEEE Electron Devices Technology and Manufacturing Conference

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 7th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2023

Y2 - 7 March 2023 through 10 March 2023

ER -

Li HH, Lin YH, Tu TY, Chien CH. Improved Electrical Characteristics of Ge p-MOSFET with Ti-GeOx Interfacial Layer by in-situ Plasma-enhanced Atomic Layer Deposition. In 7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023. Institute of Electrical and Electronics Engineers Inc. 2023. (7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023). doi: 10.1109/EDTM55494.2023.10102932

Improved Electrical Characteristics of Ge p-MOSFET with Ti-GeOx Interfacial Layer by in-situ Plasma-enhanced Atomic Layer Deposition

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