Improved electrical characteristics and reliability of MILC Poly-Si TFTs using fluorine-ion implantation

Chih Pang Chang; Yew-Chuhg Wu

doi:10.1109/LED.2007.906803

Improved electrical characteristics and reliability of MILC Poly-Si TFTs using fluorine-ion implantation

Chih Pang Chang^*, Yew-Chuhg Wu

^*Corresponding author for this work

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

20 Scopus citations

Abstract

In this letter, fluorine-ion (F⁺) implantation was employed to improve the electrical performance of metal-induced lateral-crystallization (MILC) polycrystalline-silicon thin-film transistors (poly-Si TFTs). It was found that fluorine ions minimize effectively the trap-state density, leading to superior electrical characteristics such as high field-effect mobility, low threshold voltage, low subthreshold slope, and high ON/OFF-current ratio. F⁺-implantedMILC TFTs also possess high immunity against the hot-carrier stress and, thereby, exhibit better reliability than that of typical MILC TFTs. Moreover, the manufacturing processes are simple (without any additional thermal-annealing step), and compatible with typical MILC poly-Si TFT fabrication processes.

Original language	English
Pages (from-to)	990-992
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	28
Issue number	11
DOIs	https://doi.org/10.1109/LED.2007.906803
State	Published - 1 Nov 2007

Keywords

Fluorine-ion implantation
Metal-induced lateral crystallization (MILC)
Polycrystalline-silicon thin-film transistors (poly-Si TFTs)

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10.1109/LED.2007.906803

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abstract = "In this letter, fluorine-ion (F+) implantation was employed to improve the electrical performance of metal-induced lateral-crystallization (MILC) polycrystalline-silicon thin-film transistors (poly-Si TFTs). It was found that fluorine ions minimize effectively the trap-state density, leading to superior electrical characteristics such as high field-effect mobility, low threshold voltage, low subthreshold slope, and high ON/OFF-current ratio. F+-implantedMILC TFTs also possess high immunity against the hot-carrier stress and, thereby, exhibit better reliability than that of typical MILC TFTs. Moreover, the manufacturing processes are simple (without any additional thermal-annealing step), and compatible with typical MILC poly-Si TFT fabrication processes.",

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AB - In this letter, fluorine-ion (F+) implantation was employed to improve the electrical performance of metal-induced lateral-crystallization (MILC) polycrystalline-silicon thin-film transistors (poly-Si TFTs). It was found that fluorine ions minimize effectively the trap-state density, leading to superior electrical characteristics such as high field-effect mobility, low threshold voltage, low subthreshold slope, and high ON/OFF-current ratio. F+-implantedMILC TFTs also possess high immunity against the hot-carrier stress and, thereby, exhibit better reliability than that of typical MILC TFTs. Moreover, the manufacturing processes are simple (without any additional thermal-annealing step), and compatible with typical MILC poly-Si TFT fabrication processes.

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Improved electrical characteristics and reliability of MILC Poly-Si TFTs using fluorine-ion implantation

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