Improved current drivability and poly-gate depletion of submicron PMOSFET with poly-SiGe gate and ultra-thin nitride gate dielectric

C. H. Chen; Y. K. Fang; C. W. Yang; S. F. Ting; Y. S. Tsair; C. N. Chang; Tuo-Hung Hou; M. F. Wang; M. C. Yu; C. L. Lin; S. C. Chen; C. H. Yu; M. S. Liang

doi:10.1016/S0038-1101(01)00262-3

Improved current drivability and poly-gate depletion of submicron PMOSFET with poly-SiGe gate and ultra-thin nitride gate dielectric

C. H. Chen, Y. K. Fang^*, C. W. Yang, S. F. Ting, Y. S. Tsair, C. N. Chang, Tuo-Hung Hou, M. F. Wang, M. C. Yu, C. L. Lin, S. C. Chen, C. H. Yu, M. S. Liang

^*Corresponding author for this work

Institute of Electronics

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

The electrical properties of poly-SiGe gated PMOSFETs have been investigated and compared to the conventional poly-Si gated device. Both types of PMOSFETs use ultra-thin nitride gate dielectric. Poly-SiGe gated devices exhibit 10% higher inversion capacitance, improved subthreshold properties, and superior current drivability. The improvements are contributed to the suppression of the poly-gated depletion effect and the enhanced carrier mobility.

Original language	English
Pages (from-to)	597-599
Number of pages	3
Journal	Solid-State Electronics
Volume	46
Issue number	4
DOIs	https://doi.org/10.1016/S0038-1101(01)00262-3
State	Published - 1 Apr 2002

Keywords

Nitride
PDE
Poly-gate depletion
Poly-SiGe

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10.1016/S0038-1101(01)00262-3

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Chen, C. H., Fang, Y. K., Yang, C. W., Ting, S. F., Tsair, Y. S., Chang, C. N., Hou, T.-H., Wang, M. F., Yu, M. C., Lin, C. L., Chen, S. C., Yu, C. H., & Liang, M. S. (2002). Improved current drivability and poly-gate depletion of submicron PMOSFET with poly-SiGe gate and ultra-thin nitride gate dielectric. Solid-State Electronics, 46(4), 597-599. https://doi.org/10.1016/S0038-1101(01)00262-3

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title = "Improved current drivability and poly-gate depletion of submicron PMOSFET with poly-SiGe gate and ultra-thin nitride gate dielectric",

abstract = "The electrical properties of poly-SiGe gated PMOSFETs have been investigated and compared to the conventional poly-Si gated device. Both types of PMOSFETs use ultra-thin nitride gate dielectric. Poly-SiGe gated devices exhibit 10% higher inversion capacitance, improved subthreshold properties, and superior current drivability. The improvements are contributed to the suppression of the poly-gated depletion effect and the enhanced carrier mobility.",

keywords = "Nitride, PDE, Poly-gate depletion, Poly-SiGe",

author = "Chen, {C. H.} and Fang, {Y. K.} and Yang, {C. W.} and Ting, {S. F.} and Tsair, {Y. S.} and Chang, {C. N.} and Tuo-Hung Hou and Wang, {M. F.} and Yu, {M. C.} and Lin, {C. L.} and Chen, {S. C.} and Yu, {C. H.} and Liang, {M. S.}",

year = "2002",

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doi = "10.1016/S0038-1101(01)00262-3",

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T1 - Improved current drivability and poly-gate depletion of submicron PMOSFET with poly-SiGe gate and ultra-thin nitride gate dielectric

AU - Chen, C. H.

AU - Fang, Y. K.

AU - Yang, C. W.

AU - Ting, S. F.

AU - Tsair, Y. S.

AU - Chang, C. N.

AU - Hou, Tuo-Hung

AU - Wang, M. F.

AU - Yu, M. C.

AU - Lin, C. L.

AU - Chen, S. C.

AU - Yu, C. H.

AU - Liang, M. S.

PY - 2002/4/1

Y1 - 2002/4/1

N2 - The electrical properties of poly-SiGe gated PMOSFETs have been investigated and compared to the conventional poly-Si gated device. Both types of PMOSFETs use ultra-thin nitride gate dielectric. Poly-SiGe gated devices exhibit 10% higher inversion capacitance, improved subthreshold properties, and superior current drivability. The improvements are contributed to the suppression of the poly-gated depletion effect and the enhanced carrier mobility.

AB - The electrical properties of poly-SiGe gated PMOSFETs have been investigated and compared to the conventional poly-Si gated device. Both types of PMOSFETs use ultra-thin nitride gate dielectric. Poly-SiGe gated devices exhibit 10% higher inversion capacitance, improved subthreshold properties, and superior current drivability. The improvements are contributed to the suppression of the poly-gated depletion effect and the enhanced carrier mobility.

KW - Nitride

KW - PDE

KW - Poly-gate depletion

KW - Poly-SiGe

UR - http://www.scopus.com/inward/record.url?scp=18244405817&partnerID=8YFLogxK

U2 - 10.1016/S0038-1101(01)00262-3

DO - 10.1016/S0038-1101(01)00262-3

M3 - Article

AN - SCOPUS:18244405817

SN - 0038-1101

VL - 46

SP - 597

EP - 599

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 4

ER -

Improved current drivability and poly-gate depletion of submicron PMOSFET with poly-SiGe gate and ultra-thin nitride gate dielectric

Abstract

Keywords

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