Improved crystallization temperature and interfacial properties of HfO2 gate dielectrics by adding Ta2O5with TaN metal gate

Xiongfei Yu, Chunxiang Zhu, Qingchun Zhang, Nan Wu, Hang Hu, Albert Chin, M. F. Li, D. S.H. Chan, W. D. Wang, Dim Lee Kwong

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Fingerprint

Dive into the research topics of 'Improved crystallization temperature and interfacial properties of HfO<sub>2</sub> gate dielectrics by adding Ta<sub>2</sub>O<sub>5</sub>with TaN metal gate'. Together they form a unique fingerprint.

Engineering & Materials Science