Improved crystallization temperature and interfacial properties of HfO2 gate dielectrics by adding Ta2O5with TaN metal gate

Xiongfei Yu; Chunxiang Zhu; Qingchun Zhang; Nan Wu; Hang Hu; Albert Chin; M. F. Li; D. S.H. Chan; W. D. Wang; Dim Lee Kwong

doi:10.1109/ISDRS.2003.1271996

Improved crystallization temperature and interfacial properties of HfO₂ gate dielectrics by adding Ta₂O₅with TaN metal gate

Xiongfei Yu, Chunxiang Zhu, Qingchun Zhang, Nan Wu, Hang Hu, Albert Chin, M. F. Li, D. S.H. Chan, W. D. Wang, Dim Lee Kwong

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

This paper presents high-κ value Ta₂O₅ (~26)¹ incorporated into the HfO₂ (~25) ¹ film to unproved crystallization temperature and interfacial properties. Both MOS-C and NMOSFET devices were fabricated on (100)Si substrates. After definition of active area and standard pre-gate clean, the NH₃ surface nitridation was performed at 700°C for 10sec (XRD, TEM and XPS samples without surface nitridation). HfO₂ and (HfO₂)_1-x(Ta₂O₅)_x were deposited with reactive sputtering at room temperature, and the composition of Ta₂O₅ was controlled by the power ratio between Hf and Ta target, followed by post-deposition annealing (PDA) in N₂ ambient at 700°C for 40 sec. The TaN (~160nm) was deposited using sputtering. After gate patterning, phosphorus for NMOSFETs were implanted at 50 KeV with a dose of 5E15 cm^-2. Doping activation was done at the range of 850~1000°C in N₂ ambient for 30 sec. After backside Al deposition, FGA was done at 420°C for 30 min.

Original language	English
Title of host publication	2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	62-63
Number of pages	2
ISBN (Electronic)	0780381394, 9780780381391
DOIs	https://doi.org/10.1109/ISDRS.2003.1271996
State	Published - 2003
Event	International Semiconductor Device Research Symposium, ISDRS 2003 - Washington, United States Duration: 10 Dec 2003 → 12 Dec 2003

Publication series

Name	2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings

Conference

Conference	International Semiconductor Device Research Symposium, ISDRS 2003
Country/Territory	United States
City	Washington
Period	10/12/03 → 12/12/03

Access to Document

10.1109/ISDRS.2003.1271996

Cite this

Yu, X., Zhu, C., Zhang, Q., Wu, N., Hu, H., Chin, A., Li, M. F., Chan, D. S. H., Wang, W. D., & Kwong, D. L. (2003). Improved crystallization temperature and interfacial properties of HfO₂ gate dielectrics by adding Ta₂O₅with TaN metal gate. In 2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings (pp. 62-63). Article 1271996 (2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISDRS.2003.1271996

Yu, Xiongfei ; Zhu, Chunxiang ; Zhang, Qingchun et al. / Improved crystallization temperature and interfacial properties of HfO₂ gate dielectrics by adding Ta₂O₅with TaN metal gate. 2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2003. pp. 62-63 (2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings).

@inproceedings{2201fcbe6cc641b0923855778092a567,

title = "Improved crystallization temperature and interfacial properties of HfO2 gate dielectrics by adding Ta2O5with TaN metal gate",

abstract = "This paper presents high-κ value Ta2O5 (~26)1 incorporated into the HfO2 (~25) 1 film to unproved crystallization temperature and interfacial properties. Both MOS-C and NMOSFET devices were fabricated on (100)Si substrates. After definition of active area and standard pre-gate clean, the NH3 surface nitridation was performed at 700°C for 10sec (XRD, TEM and XPS samples without surface nitridation). HfO2 and (HfO2)1-x(Ta2O5)x were deposited with reactive sputtering at room temperature, and the composition of Ta2O5 was controlled by the power ratio between Hf and Ta target, followed by post-deposition annealing (PDA) in N2 ambient at 700°C for 40 sec. The TaN (~160nm) was deposited using sputtering. After gate patterning, phosphorus for NMOSFETs were implanted at 50 KeV with a dose of 5E15 cm-2. Doping activation was done at the range of 850~1000°C in N2 ambient for 30 sec. After backside Al deposition, FGA was done at 420°C for 30 min.",

author = "Xiongfei Yu and Chunxiang Zhu and Qingchun Zhang and Nan Wu and Hang Hu and Albert Chin and Li, {M. F.} and Chan, {D. S.H.} and Wang, {W. D.} and Kwong, {Dim Lee}",

year = "2003",

doi = "10.1109/ISDRS.2003.1271996",

language = "English",

series = "2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "62--63",

booktitle = "2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings",

address = "美國",

note = "International Semiconductor Device Research Symposium, ISDRS 2003 ; Conference date: 10-12-2003 Through 12-12-2003",

}

Yu, X, Zhu, C, Zhang, Q, Wu, N, Hu, H, Chin, A, Li, MF, Chan, DSH, Wang, WD & Kwong, DL 2003, Improved crystallization temperature and interfacial properties of HfO₂ gate dielectrics by adding Ta₂O₅with TaN metal gate. in 2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings., 1271996, 2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings, Institute of Electrical and Electronics Engineers Inc., pp. 62-63, International Semiconductor Device Research Symposium, ISDRS 2003, Washington, United States, 10/12/03. https://doi.org/10.1109/ISDRS.2003.1271996

Improved crystallization temperature and interfacial properties of HfO₂ gate dielectrics by adding Ta₂O₅with TaN metal gate. / Yu, Xiongfei; Zhu, Chunxiang; Zhang, Qingchun et al.
2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2003. p. 62-63 1271996 (2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Improved crystallization temperature and interfacial properties of HfO2 gate dielectrics by adding Ta2O5with TaN metal gate

AU - Yu, Xiongfei

AU - Zhu, Chunxiang

AU - Zhang, Qingchun

AU - Wu, Nan

AU - Hu, Hang

AU - Chin, Albert

AU - Li, M. F.

AU - Chan, D. S.H.

AU - Wang, W. D.

AU - Kwong, Dim Lee

PY - 2003

Y1 - 2003

N2 - This paper presents high-κ value Ta2O5 (~26)1 incorporated into the HfO2 (~25) 1 film to unproved crystallization temperature and interfacial properties. Both MOS-C and NMOSFET devices were fabricated on (100)Si substrates. After definition of active area and standard pre-gate clean, the NH3 surface nitridation was performed at 700°C for 10sec (XRD, TEM and XPS samples without surface nitridation). HfO2 and (HfO2)1-x(Ta2O5)x were deposited with reactive sputtering at room temperature, and the composition of Ta2O5 was controlled by the power ratio between Hf and Ta target, followed by post-deposition annealing (PDA) in N2 ambient at 700°C for 40 sec. The TaN (~160nm) was deposited using sputtering. After gate patterning, phosphorus for NMOSFETs were implanted at 50 KeV with a dose of 5E15 cm-2. Doping activation was done at the range of 850~1000°C in N2 ambient for 30 sec. After backside Al deposition, FGA was done at 420°C for 30 min.

AB - This paper presents high-κ value Ta2O5 (~26)1 incorporated into the HfO2 (~25) 1 film to unproved crystallization temperature and interfacial properties. Both MOS-C and NMOSFET devices were fabricated on (100)Si substrates. After definition of active area and standard pre-gate clean, the NH3 surface nitridation was performed at 700°C for 10sec (XRD, TEM and XPS samples without surface nitridation). HfO2 and (HfO2)1-x(Ta2O5)x were deposited with reactive sputtering at room temperature, and the composition of Ta2O5 was controlled by the power ratio between Hf and Ta target, followed by post-deposition annealing (PDA) in N2 ambient at 700°C for 40 sec. The TaN (~160nm) was deposited using sputtering. After gate patterning, phosphorus for NMOSFETs were implanted at 50 KeV with a dose of 5E15 cm-2. Doping activation was done at the range of 850~1000°C in N2 ambient for 30 sec. After backside Al deposition, FGA was done at 420°C for 30 min.

UR - http://www.scopus.com/inward/record.url?scp=84945290564&partnerID=8YFLogxK

U2 - 10.1109/ISDRS.2003.1271996

DO - 10.1109/ISDRS.2003.1271996

M3 - Conference contribution

AN - SCOPUS:84945290564

T3 - 2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings

SP - 62

EP - 63

BT - 2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - International Semiconductor Device Research Symposium, ISDRS 2003

Y2 - 10 December 2003 through 12 December 2003

ER -

Yu X, Zhu C, Zhang Q, Wu N, Hu H, Chin A et al. Improved crystallization temperature and interfacial properties of HfO₂ gate dielectrics by adding Ta₂O₅with TaN metal gate. In 2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2003. p. 62-63. 1271996. (2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings). doi: 10.1109/ISDRS.2003.1271996