Improved conversion efficiency of GaN/InGaN thin-film solar cells

Ray-Hua Horng; Shih Ting Lin; Yu Li Tsai; Mu Tao Chu; Wen Yih Liao; Ming Hsien Wu; Ray Ming Lin; Yuan Chieh Lu

doi:10.1109/LED.2009.2021414

Improved conversion efficiency of GaN/InGaN thin-film solar cells

Ray-Hua Horng^*, Shih Ting Lin, Yu Li Tsai, Mu Tao Chu, Wen Yih Liao, Ming Hsien Wu, Ray Ming Lin, Yuan Chieh Lu

^*Corresponding author for this work

Institute of Electronics

Research output: Contribution to journal › Article › peer-review

94 Scopus citations

Abstract

In this letter, we report on the fabrication and photovoltaic characteristics of p-i-n GaN/InGaN thin-film solar cells. The thin-film solar cells were fabricated by removing sapphire using a laser lift-off technique and, then, transferring the remaining p-i-n structure onto a Ti/Ag mirror-coated Si substrate via wafer bonding. The mirror structure is helpful to enhance light absorption for a solar cell with a thin absorption layer. After the thin-film process for a conventional sapphire-based p-i-n solar cell, the device exhibits an enhancement factor of 57.6% in current density and an increment in conversion efficiency from 0.55% to 0.80%. The physical origin for the photocurrent enhancement in the thin-film solar cell is related to multireflection of light by the mirror structure.

Original language	English
Pages (from-to)	724-726
Number of pages	3
Journal	Ieee Electron Device Letters
Volume	30
Issue number	7
DOIs	https://doi.org/10.1109/LED.2009.2021414
State	Published - 2009

Keywords

Laser lift-off
Thin-film solar cell
Wafer bonding

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1109/LED.2009.2021414

Cite this

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title = "Improved conversion efficiency of GaN/InGaN thin-film solar cells",

abstract = "In this letter, we report on the fabrication and photovoltaic characteristics of p-i-n GaN/InGaN thin-film solar cells. The thin-film solar cells were fabricated by removing sapphire using a laser lift-off technique and, then, transferring the remaining p-i-n structure onto a Ti/Ag mirror-coated Si substrate via wafer bonding. The mirror structure is helpful to enhance light absorption for a solar cell with a thin absorption layer. After the thin-film process for a conventional sapphire-based p-i-n solar cell, the device exhibits an enhancement factor of 57.6\% in current density and an increment in conversion efficiency from 0.55\% to 0.80\%. The physical origin for the photocurrent enhancement in the thin-film solar cell is related to multireflection of light by the mirror structure.",

keywords = "Laser lift-off, Thin-film solar cell, Wafer bonding",

author = "Ray-Hua Horng and Lin, \{Shih Ting\} and Tsai, \{Yu Li\} and Chu, \{Mu Tao\} and Liao, \{Wen Yih\} and Wu, \{Ming Hsien\} and Lin, \{Ray Ming\} and Lu, \{Yuan Chieh\}",

year = "2009",

doi = "10.1109/LED.2009.2021414",

language = "English",

volume = "30",

pages = "724--726",

journal = "Ieee Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "7",

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TY - JOUR

T1 - Improved conversion efficiency of GaN/InGaN thin-film solar cells

AU - Horng, Ray-Hua

AU - Lin, Shih Ting

AU - Tsai, Yu Li

AU - Chu, Mu Tao

AU - Liao, Wen Yih

AU - Wu, Ming Hsien

AU - Lin, Ray Ming

AU - Lu, Yuan Chieh

PY - 2009

Y1 - 2009

N2 - In this letter, we report on the fabrication and photovoltaic characteristics of p-i-n GaN/InGaN thin-film solar cells. The thin-film solar cells were fabricated by removing sapphire using a laser lift-off technique and, then, transferring the remaining p-i-n structure onto a Ti/Ag mirror-coated Si substrate via wafer bonding. The mirror structure is helpful to enhance light absorption for a solar cell with a thin absorption layer. After the thin-film process for a conventional sapphire-based p-i-n solar cell, the device exhibits an enhancement factor of 57.6% in current density and an increment in conversion efficiency from 0.55% to 0.80%. The physical origin for the photocurrent enhancement in the thin-film solar cell is related to multireflection of light by the mirror structure.

AB - In this letter, we report on the fabrication and photovoltaic characteristics of p-i-n GaN/InGaN thin-film solar cells. The thin-film solar cells were fabricated by removing sapphire using a laser lift-off technique and, then, transferring the remaining p-i-n structure onto a Ti/Ag mirror-coated Si substrate via wafer bonding. The mirror structure is helpful to enhance light absorption for a solar cell with a thin absorption layer. After the thin-film process for a conventional sapphire-based p-i-n solar cell, the device exhibits an enhancement factor of 57.6% in current density and an increment in conversion efficiency from 0.55% to 0.80%. The physical origin for the photocurrent enhancement in the thin-film solar cell is related to multireflection of light by the mirror structure.

KW - Laser lift-off

KW - Thin-film solar cell

KW - Wafer bonding

UR - https://www.scopus.com/pages/publications/67650435785

U2 - 10.1109/LED.2009.2021414

DO - 10.1109/LED.2009.2021414

M3 - Article

AN - SCOPUS:67650435785

SN - 0741-3106

VL - 30

SP - 724

EP - 726

JO - Ieee Electron Device Letters

JF - Ieee Electron Device Letters

IS - 7

ER -

Improved conversion efficiency of GaN/InGaN thin-film solar cells

Abstract

Keywords

UN SDGs

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