Improved carrier injection in GaN-based VCSEL via AlGaN/GaN multiple quantum barrier electron blocking layer

D. H. Hsieh; A. J. Tzou; Tsung-Sheng Kao; F. I. Lai; D. W. Lin; B. C. Lin; Tien-Chang Lu; W. C. Lai; Cheng-Huan Chen; Hao-Chung Kuo

doi:10.1364/OE.23.027145

Improved carrier injection in GaN-based VCSEL via AlGaN/GaN multiple quantum barrier electron blocking layer

D. H. Hsieh, A. J. Tzou, Tsung-Sheng Kao, F. I. Lai, D. W. Lin, B. C. Lin, Tien-Chang Lu, W. C. Lai, Cheng-Huan Chen, Hao-Chung Kuo

Department of Photonics

Research output: Contribution to journal › Article › peer-review

38 Scopus citations

Abstract

In this report, the improved lasing performance of the III-nitride based vertical-cavity surface-emitting laser (VCSEL) has been demonstrated by replacing the bulk AlGaN electron blocking layer (EBL) in the conventional VCSEL structure with an AlGaN/GaN multiple quantum barrier (MQB) EBL. The output power can be enhanced up to three times from 0.3 mW to 0.9 mW. In addition, the threshold current density of the fabricated device with the MQB-EBL was reduced from 12 kA/cm² (9.5 mA) to 10.6 kA/cm² (8.5 mA) compared with the use of the bulk AlGaN EBL. Theoretical calculation results suggest that the improved carrier injection efficiency can be mainly attributed to the partial release of the strain and the effect of quantum interference by using the MQB structure, hence increasing the effective barrier height of the conduction band.

Original language	English
Pages (from-to)	27145-27151
Number of pages	7
Journal	Optics Express
Volume	23
Issue number	21
DOIs	https://doi.org/10.1364/OE.23.027145
State	Published - 19 Oct 2015

Access to Document

10.1364/OE.23.027145

Cite this

@article{99e388161ba3443dbef73ba9635e80ca,

title = "Improved carrier injection in GaN-based VCSEL via AlGaN/GaN multiple quantum barrier electron blocking layer",

abstract = "In this report, the improved lasing performance of the III-nitride based vertical-cavity surface-emitting laser (VCSEL) has been demonstrated by replacing the bulk AlGaN electron blocking layer (EBL) in the conventional VCSEL structure with an AlGaN/GaN multiple quantum barrier (MQB) EBL. The output power can be enhanced up to three times from 0.3 mW to 0.9 mW. In addition, the threshold current density of the fabricated device with the MQB-EBL was reduced from 12 kA/cm2 (9.5 mA) to 10.6 kA/cm2 (8.5 mA) compared with the use of the bulk AlGaN EBL. Theoretical calculation results suggest that the improved carrier injection efficiency can be mainly attributed to the partial release of the strain and the effect of quantum interference by using the MQB structure, hence increasing the effective barrier height of the conduction band.",

author = "Hsieh, {D. H.} and Tzou, {A. J.} and Tsung-Sheng Kao and Lai, {F. I.} and Lin, {D. W.} and Lin, {B. C.} and Tien-Chang Lu and Lai, {W. C.} and Cheng-Huan Chen and Hao-Chung Kuo",

year = "2015",

month = oct,

day = "19",

doi = "10.1364/OE.23.027145",

language = "English",

volume = "23",

pages = "27145--27151",

journal = "Optics Express",

issn = "1094-4087",

publisher = "The Optical Society",

number = "21",

}

TY - JOUR

T1 - Improved carrier injection in GaN-based VCSEL via AlGaN/GaN multiple quantum barrier electron blocking layer

AU - Hsieh, D. H.

AU - Tzou, A. J.

AU - Kao, Tsung-Sheng

AU - Lai, F. I.

AU - Lin, D. W.

AU - Lin, B. C.

AU - Lu, Tien-Chang

AU - Lai, W. C.

AU - Chen, Cheng-Huan

AU - Kuo, Hao-Chung

PY - 2015/10/19

Y1 - 2015/10/19

N2 - In this report, the improved lasing performance of the III-nitride based vertical-cavity surface-emitting laser (VCSEL) has been demonstrated by replacing the bulk AlGaN electron blocking layer (EBL) in the conventional VCSEL structure with an AlGaN/GaN multiple quantum barrier (MQB) EBL. The output power can be enhanced up to three times from 0.3 mW to 0.9 mW. In addition, the threshold current density of the fabricated device with the MQB-EBL was reduced from 12 kA/cm2 (9.5 mA) to 10.6 kA/cm2 (8.5 mA) compared with the use of the bulk AlGaN EBL. Theoretical calculation results suggest that the improved carrier injection efficiency can be mainly attributed to the partial release of the strain and the effect of quantum interference by using the MQB structure, hence increasing the effective barrier height of the conduction band.

AB - In this report, the improved lasing performance of the III-nitride based vertical-cavity surface-emitting laser (VCSEL) has been demonstrated by replacing the bulk AlGaN electron blocking layer (EBL) in the conventional VCSEL structure with an AlGaN/GaN multiple quantum barrier (MQB) EBL. The output power can be enhanced up to three times from 0.3 mW to 0.9 mW. In addition, the threshold current density of the fabricated device with the MQB-EBL was reduced from 12 kA/cm2 (9.5 mA) to 10.6 kA/cm2 (8.5 mA) compared with the use of the bulk AlGaN EBL. Theoretical calculation results suggest that the improved carrier injection efficiency can be mainly attributed to the partial release of the strain and the effect of quantum interference by using the MQB structure, hence increasing the effective barrier height of the conduction band.

UR - http://www.scopus.com/inward/record.url?scp=84957088186&partnerID=8YFLogxK

U2 - 10.1364/OE.23.027145

DO - 10.1364/OE.23.027145

M3 - Article

AN - SCOPUS:84957088186

SN - 1094-4087

VL - 23

SP - 27145

EP - 27151

JO - Optics Express

JF - Optics Express

IS - 21

ER -

Improved carrier injection in GaN-based VCSEL via AlGaN/GaN multiple quantum barrier electron blocking layer

Abstract

Access to Document

Other files and links

Fingerprint

Cite this