Improved capacitance density and reliability of high-κNi/ZrO 2/TiN MIM capacitors using laser-annealing technique

Chung-Yong Tsai; K. C. Chiang; S. H. Lin; K. C. Hsu; C. C. Chi; Albert Chin

doi:10.1109/LED.2010.2049636

Improved capacitance density and reliability of high-κNi/ZrO ₂/TiN MIM capacitors using laser-annealing technique

Chung-Yong Tsai, K. C. Chiang, S. H. Lin, K. C. Hsu, C. C. Chi, Albert Chin

Department of Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

47 Scopus citations

Abstract

We have fabricated high-κNi/ZrO₂/TiN metalinsulatormetal capacitors with a very high 52-fF/μm₂ capacitance density, a low leakage current of 1.6×10^-7Acm₂, and good ten-year reliability with a small Δ C/C of 1.7% at 2 V. From X-ray diffraction measurements, laser annealing can improve the permittivity of ZrO₂ due to tetragonal-phase formation which in turn helps enhance capacitance density and reliability. Such excellent device integrity is attributed to the combination of enhanced ZrO₂ tetragonal phase by laser annealing, high work-function Ni electrode, and good bottom-interface treatment.

Original language	English
Article number	5482029
Pages (from-to)	749-751
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	31
Issue number	7
DOIs	https://doi.org/10.1109/LED.2010.2049636
State	Published - 1 Jul 2010

Keywords

High-κ
ZrO
laser annealing
metal-insulator-metal (MIM)
reliability

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10.1109/LED.2010.2049636

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title = "Improved capacitance density and reliability of high-κNi/ZrO 2/TiN MIM capacitors using laser-annealing technique",

abstract = "We have fabricated high-κNi/ZrO2/TiN metalinsulatormetal capacitors with a very high 52-fF/μm2 capacitance density, a low leakage current of 1.6×10-7Acm2, and good ten-year reliability with a small Δ C/C of 1.7% at 2 V. From X-ray diffraction measurements, laser annealing can improve the permittivity of ZrO2 due to tetragonal-phase formation which in turn helps enhance capacitance density and reliability. Such excellent device integrity is attributed to the combination of enhanced ZrO2 tetragonal phase by laser annealing, high work-function Ni electrode, and good bottom-interface treatment.",

keywords = "High-κ, ZrO, laser annealing, metal-insulator-metal (MIM), reliability",

author = "Chung-Yong Tsai and Chiang, {K. C.} and Lin, {S. H.} and Hsu, {K. C.} and Chi, {C. C.} and Albert Chin",

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doi = "10.1109/LED.2010.2049636",

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T1 - Improved capacitance density and reliability of high-κNi/ZrO 2/TiN MIM capacitors using laser-annealing technique

AU - Tsai, Chung-Yong

AU - Chiang, K. C.

AU - Lin, S. H.

AU - Hsu, K. C.

AU - Chi, C. C.

AU - Chin, Albert

PY - 2010/7/1

Y1 - 2010/7/1

N2 - We have fabricated high-κNi/ZrO2/TiN metalinsulatormetal capacitors with a very high 52-fF/μm2 capacitance density, a low leakage current of 1.6×10-7Acm2, and good ten-year reliability with a small Δ C/C of 1.7% at 2 V. From X-ray diffraction measurements, laser annealing can improve the permittivity of ZrO2 due to tetragonal-phase formation which in turn helps enhance capacitance density and reliability. Such excellent device integrity is attributed to the combination of enhanced ZrO2 tetragonal phase by laser annealing, high work-function Ni electrode, and good bottom-interface treatment.

AB - We have fabricated high-κNi/ZrO2/TiN metalinsulatormetal capacitors with a very high 52-fF/μm2 capacitance density, a low leakage current of 1.6×10-7Acm2, and good ten-year reliability with a small Δ C/C of 1.7% at 2 V. From X-ray diffraction measurements, laser annealing can improve the permittivity of ZrO2 due to tetragonal-phase formation which in turn helps enhance capacitance density and reliability. Such excellent device integrity is attributed to the combination of enhanced ZrO2 tetragonal phase by laser annealing, high work-function Ni electrode, and good bottom-interface treatment.

KW - High-κ

KW - ZrO

KW - laser annealing

KW - metal-insulator-metal (MIM)

KW - reliability

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DO - 10.1109/LED.2010.2049636

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Improved capacitance density and reliability of high-κNi/ZrO ₂/TiN MIM capacitors using laser-annealing technique

Abstract

Keywords

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