TY - GEN
T1 - Improve the electrical properties of NILC poly-Si films using a gettering substrate
AU - Wu, Yew-Chuhg
AU - Hu, Chen-Ming
AU - Lin, Chi Ching
PY - 2007/7
Y1 - 2007/7
N2 - Ni-metal-induced lateral crystallization (NILC) of amorphous silicon (α-Si) has been employed to fabricate polycrystalline silicon (poly-Si) thin-film transistors. However, this technology often leads to trapped Ni and NiSi2 precipitates, thus degrading the device performance. We proposed using α-Si-coated wafers as Ni-gettering substrates. After gettering process, the Ni impurity within the NILC poly-Si film and the leakage current were reduced.
AB - Ni-metal-induced lateral crystallization (NILC) of amorphous silicon (α-Si) has been employed to fabricate polycrystalline silicon (poly-Si) thin-film transistors. However, this technology often leads to trapped Ni and NiSi2 precipitates, thus degrading the device performance. We proposed using α-Si-coated wafers as Ni-gettering substrates. After gettering process, the Ni impurity within the NILC poly-Si film and the leakage current were reduced.
UR - http://www.scopus.com/inward/record.url?scp=56049093258&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:56049093258
SN - 9789572852248
T3 - IDMC 2007 - International Display Manufacturing Conference and FPD Expo - Proceedings
SP - 13
EP - 14
BT - IDMC 2007 - International Display Manufacturing Conference and FPD Expo - Proceedings
T2 - International Display Manufacturing Conference and Exhibition, IDMC 2007
Y2 - 3 July 2007 through 6 July 2007
ER -