Improve characteristics of GaN-based green mini-LEDs with double dielectric sidewall passivation

Meng Chun Shen, Wenan Guo, Jinlan Chen, Su Hui Lin, Saijun Li, Shouqiang Lai, Tingwei Lu, Min Huang, Hao Chung Kuo, Zhong Chen, Tingzhu Wu*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

The technique of double dielectric sidewall passivation could improve the electroluminescence characteristics of green mini-LED, including the leakage current, electroluminescence intensity and external quantum efficiency (EQE). According to the analysis of EQE with ABC + f(n) model, both the increment of size and the sidewall passivation could reduce the fraction of SRH recombination. Then, the results of time-resolved photoluminescence measurement indicated that the carrier lifetime of mini-LEDs with higher surface-volume ratio and sidewall passivation would be reduced. Moreover, the communication performances such as modulation bandwidth and frequency response of green mini-LEDs could also be improved by adopting double dielectric sidewall passivation, and the smaller sized green mini-LEDs could achieve higher modulation bandwidth and frequency response.

Original languageEnglish
Article number115524
JournalPhysica Scripta
Volume98
Issue number11
DOIs
StatePublished - 1 Nov 2023

Keywords

  • communication performances
  • double dielectric sidewall passivation
  • electroluminescence
  • green mini-LED

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