This paper presents a complete portfolio of silicon integrated RF power MOS using 0.18μm CMOS technology in the first time. The proposed structure of power MOS promises high breakdown voltage, and presents excellent RF characteristics. To guarantee the production level, a complete qualification testing is also included.
|Number of pages||4|
|Journal||IEEE MTT-S International Microwave Symposium Digest|
|State||Published - 2 Jun 2002|
|Event||IEEE MSS-S International Microwave Symposium Digest - Seattle, WA, United States|
Duration: 2 Jun 2002 → 7 Jun 2002