Implementation of film profile engineering in the fabrication of ZnO thin-film transistors

Rong Jhe Lyu, Horng-Chih Lin, Tiao Yuan Huang

Research output: Contribution to journalArticlepeer-review

9 Scopus citations


A novel approach, which can delicately form a desirable film profile for deposited gate oxide, channel, and source/drain contacts of oxide-based thin-film transistors (TFTs) is proposed. To demonstrate the film-profile engineering concept used in this approach, a simple one-mask process was developed for fabricating ZnO TFTs with submicrometer channel length. The fabrication takes advantage of a suspended bridge hanging across the device to tailor the desirable profile of deposited films with proper tools. The fabricated devices show high on/off current ratio ({>}{\rm 10}^{9}) , steep subthreshold swing (71-187 mV/decade), and high mobility (21-45 {\rm cm}^{2}/{\rm V}{\cdot}~{\rm s} ). Very small variation in device characteristics among the devices with the same channel dimensions is also confirmed.

Original languageEnglish
Article number6783733
Pages (from-to)1417-1422
Number of pages6
JournalIEEE Transactions on Electron Devices
Issue number5
StatePublished - 1 Jan 2014


  • Film profile engineering (FPE)
  • metal oxide
  • thin-film transistors (TFTs)
  • ZnO


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