Abstract
A novel approach, which can delicately form a desirable film profile for deposited gate oxide, channel, and source/drain contacts of oxide-based thin-film transistors (TFTs) is proposed. To demonstrate the film-profile engineering concept used in this approach, a simple one-mask process was developed for fabricating ZnO TFTs with submicrometer channel length. The fabrication takes advantage of a suspended bridge hanging across the device to tailor the desirable profile of deposited films with proper tools. The fabricated devices show high on/off current ratio ({>}{\rm 10}^{9}) , steep subthreshold swing (71-187 mV/decade), and high mobility (21-45 {\rm cm}^{2}/{\rm V}{\cdot}~{\rm s} ). Very small variation in device characteristics among the devices with the same channel dimensions is also confirmed.
Original language | English |
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Article number | 6783733 |
Pages (from-to) | 1417-1422 |
Number of pages | 6 |
Journal | IEEE Transactions on Electron Devices |
Volume | 61 |
Issue number | 5 |
DOIs | |
State | Published - 1 Jan 2014 |
Keywords
- Film profile engineering (FPE)
- metal oxide
- thin-film transistors (TFTs)
- ZnO