Implementation of a CMOS/MEMS accelerometer with ASIC processes

Yu Sian Liu*, Kuei-Ann Wen

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

8 Scopus citations


This paper presents the design, simulation and mechanical characterization of a newly proposed complementary metal-oxide semiconductor (CMOS)/micro-electromechanical system (MEMS) accelerometer. The monolithic CMOS/MEMS accelerometer was fabricated using the 0.18 μm application-specific integrated circuit (ASIC)-compatible CMOS/MEMS process. An approximate analytical model for the spring design is presented. The experiments showed that the resonant frequency of the proposed tri-axis accelerometer was around 5.35 kHz for out-plane vibration. The tri-axis accelerometer had an area of 1096 μm × 1256 μm.

Original languageEnglish
Article number50
Issue number1
StatePublished - 12 Jan 2019


  • Accelerometer design
  • Analytical model
  • Spring design


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