Implementation of a 900 V switching circuit for high breakdown voltage β-Ga2O3 Schottky diodes

Yen Ting Chen; Jiancheng Yang; Fan Ren; Chin Wei Chang; Jenshan Lin; S. J. Pearton; Marko J. Tadjer; Akito Kuramata; Yu-Te Liao

doi:10.1149/2.0421907jss

Implementation of a 900 V switching circuit for high breakdown voltage β-Ga₂O₃ Schottky diodes

Yen Ting Chen, Jiancheng Yang, Fan Ren, Chin Wei Chang, Jenshan Lin, S. J. Pearton, Marko J. Tadjer, Akito Kuramata, Yu-Te Liao^*

^*Corresponding author for this work

Department of Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

21 Scopus citations

Abstract

This paper presents a switching circuit for high breakdown-voltage Ga₂O₃ vertical Schottky rectifiers. Field-plated edge-terminated (FPET) vertical Schottky diodes were fabricated on a 20-μm thick Si-doped n-type Ga₂O₃ drift layer which was grown on the 650-μm thick β-Ga₂O₃ substrate via halide vapor phase epitaxy (HVPE). The measured reverse recovery time of the proposed Ga₂O₃ Schottky diode was 81 ns when switched to a reverse bias voltage of −900 V. The implementation of a switching circuit with the novel Ga₂O₃ diode is the first demonstrated at such a high switching voltage. This paper also provides insights for the practical implementation of the Ga₂O₃ vertical Schottky rectifiers from device fabrication to circuit design.

Original language	English
Pages (from-to)	Q3229-Q3234
Journal	ECS Journal of Solid State Science and Technology
Volume	8
Issue number	7
DOIs	https://doi.org/10.1149/2.0421907jss
State	Published - 2019

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@article{369828c590f34168941a6c6f98395cd5,

title = "Implementation of a 900 V switching circuit for high breakdown voltage β-Ga2O3 Schottky diodes",

abstract = "This paper presents a switching circuit for high breakdown-voltage Ga2O3 vertical Schottky rectifiers. Field-plated edge-terminated (FPET) vertical Schottky diodes were fabricated on a 20-μm thick Si-doped n-type Ga2O3 drift layer which was grown on the 650-μm thick β-Ga2O3 substrate via halide vapor phase epitaxy (HVPE). The measured reverse recovery time of the proposed Ga2O3 Schottky diode was 81 ns when switched to a reverse bias voltage of −900 V. The implementation of a switching circuit with the novel Ga2O3 diode is the first demonstrated at such a high switching voltage. This paper also provides insights for the practical implementation of the Ga2O3 vertical Schottky rectifiers from device fabrication to circuit design.",

author = "Chen, {Yen Ting} and Jiancheng Yang and Fan Ren and Chang, {Chin Wei} and Jenshan Lin and Pearton, {S. J.} and Tadjer, {Marko J.} and Akito Kuramata and Yu-Te Liao",

note = "Publisher Copyright: {\textcopyright} The Author(s) 2019.",

year = "2019",

doi = "10.1149/2.0421907jss",

language = "English",

volume = "8",

pages = "Q3229--Q3234",

journal = "ECS Journal of Solid State Science and Technology",

issn = "2162-8769",

publisher = "Electrochemical Society, Inc.",

number = "7",

}

TY - JOUR

T1 - Implementation of a 900 V switching circuit for high breakdown voltage β-Ga2O3 Schottky diodes

AU - Chen, Yen Ting

AU - Yang, Jiancheng

AU - Ren, Fan

AU - Chang, Chin Wei

AU - Lin, Jenshan

AU - Pearton, S. J.

AU - Tadjer, Marko J.

AU - Kuramata, Akito

AU - Liao, Yu-Te

PY - 2019

Y1 - 2019

N2 - This paper presents a switching circuit for high breakdown-voltage Ga2O3 vertical Schottky rectifiers. Field-plated edge-terminated (FPET) vertical Schottky diodes were fabricated on a 20-μm thick Si-doped n-type Ga2O3 drift layer which was grown on the 650-μm thick β-Ga2O3 substrate via halide vapor phase epitaxy (HVPE). The measured reverse recovery time of the proposed Ga2O3 Schottky diode was 81 ns when switched to a reverse bias voltage of −900 V. The implementation of a switching circuit with the novel Ga2O3 diode is the first demonstrated at such a high switching voltage. This paper also provides insights for the practical implementation of the Ga2O3 vertical Schottky rectifiers from device fabrication to circuit design.

AB - This paper presents a switching circuit for high breakdown-voltage Ga2O3 vertical Schottky rectifiers. Field-plated edge-terminated (FPET) vertical Schottky diodes were fabricated on a 20-μm thick Si-doped n-type Ga2O3 drift layer which was grown on the 650-μm thick β-Ga2O3 substrate via halide vapor phase epitaxy (HVPE). The measured reverse recovery time of the proposed Ga2O3 Schottky diode was 81 ns when switched to a reverse bias voltage of −900 V. The implementation of a switching circuit with the novel Ga2O3 diode is the first demonstrated at such a high switching voltage. This paper also provides insights for the practical implementation of the Ga2O3 vertical Schottky rectifiers from device fabrication to circuit design.

UR - http://www.scopus.com/inward/record.url?scp=85072077716&partnerID=8YFLogxK

U2 - 10.1149/2.0421907jss

DO - 10.1149/2.0421907jss

M3 - Article

AN - SCOPUS:85072077716

SN - 2162-8769

VL - 8

SP - Q3229-Q3234

JO - ECS Journal of Solid State Science and Technology

JF - ECS Journal of Solid State Science and Technology

IS - 7

ER -

Implementation of a 900 V switching circuit for high breakdown voltage β-Ga₂O₃ Schottky diodes

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