Implantation free GAA double spacer poly-Si nanowires channel junctionless FETs with sub-1V gate operation and near ideal subthreshold swing

Engineering & Materials Science

• Nanowires 100%
• Polysilicon 93%
• Field effect transistors 86%
• Multiple-gate field-effect transistors 34%
• Electron beam lithography 31%
• Three dimensional integrated circuits 28%

Physics & Astronomy

• spacers 83%
• nanowires 64%
• field effect transistors 63%
• integrated circuits 19%
• lithography 16%
• electron beams 14%

Chemical Compounds

• Nanowire 69%
• Electron Beam 21%
• Dimension 15%
• Application 6%