Impacts of the underlying insulating layers on the MILC growth length and electrical characteristics

Chia Chun Liao; Min Chen Lin; Shao Xuan Liu; Tien-Sheng Chao

doi:10.1109/LED.2011.2174609

Impacts of the underlying insulating layers on the MILC growth length and electrical characteristics

Chia Chun Liao^*, Min Chen Lin, Shao Xuan Liu, Tien-Sheng Chao

^*Corresponding author for this work

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

This letter investigates the impacts of proximity layers on metal-induced lateral crystallization (MILC). The underlying insulating layers not only affect the MILC growth length but also influence the electrical characteristics. Based on the comparison among the underlying insulating layers, SiN is unsuitable to be an underlying insulating layer because of concerns regarding the crystallization condition. This letter proposes three reasonable mechanisms, including the gettering of Ni, intrinsic stress, and the involvement of hydrogen to enhance the understanding of the impacts of proximity layers.

Original language	English
Article number	6101550
Pages (from-to)	239-241
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	33
Issue number	2
DOIs	https://doi.org/10.1109/LED.2011.2174609
State	Published - 1 Feb 2012

Keywords

Metal-induced lateral crystallization (MILC)
strain
thin-film transistors (TFTs)

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10.1109/LED.2011.2174609

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@article{f83f69c457eb4a079723515a31f57600,

title = "Impacts of the underlying insulating layers on the MILC growth length and electrical characteristics",

abstract = "This letter investigates the impacts of proximity layers on metal-induced lateral crystallization (MILC). The underlying insulating layers not only affect the MILC growth length but also influence the electrical characteristics. Based on the comparison among the underlying insulating layers, SiN is unsuitable to be an underlying insulating layer because of concerns regarding the crystallization condition. This letter proposes three reasonable mechanisms, including the gettering of Ni, intrinsic stress, and the involvement of hydrogen to enhance the understanding of the impacts of proximity layers.",

keywords = "Metal-induced lateral crystallization (MILC), strain, thin-film transistors (TFTs)",

author = "Liao, {Chia Chun} and Lin, {Min Chen} and Liu, {Shao Xuan} and Tien-Sheng Chao",

year = "2012",

month = feb,

day = "1",

doi = "10.1109/LED.2011.2174609",

language = "English",

volume = "33",

pages = "239--241",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "2",

}

TY - JOUR

T1 - Impacts of the underlying insulating layers on the MILC growth length and electrical characteristics

AU - Liao, Chia Chun

AU - Lin, Min Chen

AU - Liu, Shao Xuan

AU - Chao, Tien-Sheng

PY - 2012/2/1

Y1 - 2012/2/1

N2 - This letter investigates the impacts of proximity layers on metal-induced lateral crystallization (MILC). The underlying insulating layers not only affect the MILC growth length but also influence the electrical characteristics. Based on the comparison among the underlying insulating layers, SiN is unsuitable to be an underlying insulating layer because of concerns regarding the crystallization condition. This letter proposes three reasonable mechanisms, including the gettering of Ni, intrinsic stress, and the involvement of hydrogen to enhance the understanding of the impacts of proximity layers.

AB - This letter investigates the impacts of proximity layers on metal-induced lateral crystallization (MILC). The underlying insulating layers not only affect the MILC growth length but also influence the electrical characteristics. Based on the comparison among the underlying insulating layers, SiN is unsuitable to be an underlying insulating layer because of concerns regarding the crystallization condition. This letter proposes three reasonable mechanisms, including the gettering of Ni, intrinsic stress, and the involvement of hydrogen to enhance the understanding of the impacts of proximity layers.

KW - Metal-induced lateral crystallization (MILC)

KW - strain

KW - thin-film transistors (TFTs)

UR - http://www.scopus.com/inward/record.url?scp=84856257276&partnerID=8YFLogxK

U2 - 10.1109/LED.2011.2174609

DO - 10.1109/LED.2011.2174609

M3 - Article

AN - SCOPUS:84856257276

SN - 0741-3106

VL - 33

SP - 239

EP - 241

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 2

M1 - 6101550

ER -

Impacts of the underlying insulating layers on the MILC growth length and electrical characteristics

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Keywords

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