Impacts of the Shell Doping Profile on the Electrical Characteristics of Junctionless FETs

Malkundi Puttaveerappa Vijay Kumar, Chia Ying Hu, Kuo Hsing Kao, Yao Jen Lee, Tien-Sheng Chao

Research output: Contribution to journalArticlepeer-review

38 Scopus citations


This paper presents the impacts of an advanced shell doping profile (SDP) on the electrical characteristics of a junctionless (JL) FET in terms of OFF-current, subthreshold swing (SS), and ON-current by a numerical simulator. Due to the potential mirroring effect, a special observation stemming from the SDP, the carriers can enter the intrinsic region from the doped surface reducing the series resistance though the junction depth is smaller than 5 nm. The proposed doping profile provides an additional structure parameter for designing a JL FET showing the mitigated short-channel effects, a better SS, and a higher ON/OFF current ratio for sub-20-nm channel length. Compared with traditional devices, a JL FET with the proposed SDP shows a lower OFF-current by decades and less electrical characteristics variation caused by the nanowire diameter variation. The SDP not only reduces the series resistance of a JL FET but also poses a possible solution of avoiding the negative impacts of quantum confinement for advanced technology nodes.

Original languageEnglish
Article number7244201
Pages (from-to)3541-3546
Number of pages6
JournalIEEE Transactions on Electron Devices
Issue number11
StatePublished - 7 Sep 2015


  • Junctionless (JL) FET
  • shell doping profile (SDP)


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