Impacts of surface nitridation on crystalline ferroelectric phase of Hf1-xZrxOand ferroelectric FET performance

Yi Jan Lin, Chih Yu Teng, Chen-Ming Hu, Chun-Jung Su, Yuan-Chieh Tseng*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

12 Scopus citations

Abstract

This paper presents an approach to enhance Hf0.5Zr0.5O2 (HZO) ferroelectric orthorhombic phase (O-phase) formation via in situ NH3 plasma treatment. High-resolution non-disruptive hard x-ray photoelectron spectroscopy confirmed that O-phase formation can be enhanced by suppressed interfacial diffusion between HZO and the top TiN electrode. Additional N-bonding facilitated by NH3 treatment was shown to suppress the interaction between TiN and HZO, thereby reducing the formation of oxygen vacancies within HZO. It was shown to improve the reliability and ferroelectric performance (examined by the leakage current and positive-up-negative-down measurements) of HZO devices. After cyclic operations, NH3-treated ferroelectric FETs (FeFETs) exhibited stable transfer characteristics and memory windows, whereas untreated devices presented unstable behaviors. Our results demonstrate the efficacy of the proposed in situ NH3-treatment scheme in enhancing the stability of HZO-based FeFETs.

Original languageEnglish
Article number192102
Pages (from-to)1-5
Number of pages5
JournalApplied Physics Letters
Volume119
Issue number19
DOIs
StatePublished - 8 Nov 2021

Fingerprint

Dive into the research topics of 'Impacts of surface nitridation on crystalline ferroelectric phase of Hf1-xZrxOand ferroelectric FET performance'. Together they form a unique fingerprint.

Cite this