Impacts of surface nitridation on crystalline ferroelectric phase of Hf1-xZrxO2 and ferroelectric FET performance

Yi Jan Lin; Chih Yu Teng; Chen-Ming Hu; Chun-Jung Su; Yuan-Chieh Tseng

doi:10.1063/5.0062475

Impacts of surface nitridation on crystalline ferroelectric phase of Hf_1-xZr_xO₂and ferroelectric FET performance

Yi Jan Lin, Chih Yu Teng, Chen-Ming Hu, Chun-Jung Su, Yuan-Chieh Tseng^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

This paper presents an approach to enhance Hf0.5Zr0.5O2 (HZO) ferroelectric orthorhombic phase (O-phase) formation via in situ NH3 plasma treatment. High-resolution non-disruptive hard x-ray photoelectron spectroscopy confirmed that O-phase formation can be enhanced by suppressed interfacial diffusion between HZO and the top TiN electrode. Additional N-bonding facilitated by NH3 treatment was shown to suppress the interaction between TiN and HZO, thereby reducing the formation of oxygen vacancies within HZO. It was shown to improve the reliability and ferroelectric performance (examined by the leakage current and positive-up-negative-down measurements) of HZO devices. After cyclic operations, NH3-treated ferroelectric FETs (FeFETs) exhibited stable transfer characteristics and memory windows, whereas untreated devices presented unstable behaviors. Our results demonstrate the efficacy of the proposed in situ NH3-treatment scheme in enhancing the stability of HZO-based FeFETs.

Original language	English
Article number	192102
Pages (from-to)	1-5
Number of pages	5
Journal	Applied Physics Letters
Volume	119
Issue number	19
DOIs	https://doi.org/10.1063/5.0062475
State	Published - 8 Nov 2021

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title = "Impacts of surface nitridation on crystalline ferroelectric phase of Hf1-xZrxO2 and ferroelectric FET performance",

abstract = "This paper presents an approach to enhance Hf0.5Zr0.5O2 (HZO) ferroelectric orthorhombic phase (O-phase) formation via in situ NH3 plasma treatment. High-resolution non-disruptive hard x-ray photoelectron spectroscopy confirmed that O-phase formation can be enhanced by suppressed interfacial diffusion between HZO and the top TiN electrode. Additional N-bonding facilitated by NH3 treatment was shown to suppress the interaction between TiN and HZO, thereby reducing the formation of oxygen vacancies within HZO. It was shown to improve the reliability and ferroelectric performance (examined by the leakage current and positive-up-negative-down measurements) of HZO devices. After cyclic operations, NH3-treated ferroelectric FETs (FeFETs) exhibited stable transfer characteristics and memory windows, whereas untreated devices presented unstable behaviors. Our results demonstrate the efficacy of the proposed in situ NH3-treatment scheme in enhancing the stability of HZO-based FeFETs.",

author = "Lin, {Yi Jan} and Teng, {Chih Yu} and Chen-Ming Hu and Chun-Jung Su and Yuan-Chieh Tseng",

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doi = "10.1063/5.0062475",

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T1 - Impacts of surface nitridation on crystalline ferroelectric phase of Hf1-xZrxO2 and ferroelectric FET performance

AU - Lin, Yi Jan

AU - Teng, Chih Yu

AU - Hu, Chen-Ming

AU - Su, Chun-Jung

AU - Tseng, Yuan-Chieh

PY - 2021/11/8

Y1 - 2021/11/8

N2 - This paper presents an approach to enhance Hf0.5Zr0.5O2 (HZO) ferroelectric orthorhombic phase (O-phase) formation via in situ NH3 plasma treatment. High-resolution non-disruptive hard x-ray photoelectron spectroscopy confirmed that O-phase formation can be enhanced by suppressed interfacial diffusion between HZO and the top TiN electrode. Additional N-bonding facilitated by NH3 treatment was shown to suppress the interaction between TiN and HZO, thereby reducing the formation of oxygen vacancies within HZO. It was shown to improve the reliability and ferroelectric performance (examined by the leakage current and positive-up-negative-down measurements) of HZO devices. After cyclic operations, NH3-treated ferroelectric FETs (FeFETs) exhibited stable transfer characteristics and memory windows, whereas untreated devices presented unstable behaviors. Our results demonstrate the efficacy of the proposed in situ NH3-treatment scheme in enhancing the stability of HZO-based FeFETs.

AB - This paper presents an approach to enhance Hf0.5Zr0.5O2 (HZO) ferroelectric orthorhombic phase (O-phase) formation via in situ NH3 plasma treatment. High-resolution non-disruptive hard x-ray photoelectron spectroscopy confirmed that O-phase formation can be enhanced by suppressed interfacial diffusion between HZO and the top TiN electrode. Additional N-bonding facilitated by NH3 treatment was shown to suppress the interaction between TiN and HZO, thereby reducing the formation of oxygen vacancies within HZO. It was shown to improve the reliability and ferroelectric performance (examined by the leakage current and positive-up-negative-down measurements) of HZO devices. After cyclic operations, NH3-treated ferroelectric FETs (FeFETs) exhibited stable transfer characteristics and memory windows, whereas untreated devices presented unstable behaviors. Our results demonstrate the efficacy of the proposed in situ NH3-treatment scheme in enhancing the stability of HZO-based FeFETs.

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DO - 10.1063/5.0062475

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VL - 119

SP - 1

EP - 5

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 19

M1 - 192102

ER -

Impacts of surface nitridation on crystalline ferroelectric phase of Hf_1-xZr_xO₂and ferroelectric FET performance

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