Impacts of silicon nanocrystal incorporation on the transfer characteristics of poly-silicon nanowire SONOS devices

Ko Hui Lee; Horng-Chih Lin; Tiao Yuan Huang

doi:10.1109/SNW.2012.6243353

Impacts of silicon nanocrystal incorporation on the transfer characteristics of poly-silicon nanowire SONOS devices

Ko Hui Lee^*, Horng-Chih Lin, Tiao Yuan Huang

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Gate-all-around poly-silicon nanowire (GAA poly-Si NW) SONOS devices embedded with silicon nanocrystals (Si-NCs) were fabricated and characterized. As Si-NCs are incorporated, the transfer characteristics show a large clockwise I _d-V _g hysteresis and a small kink under reverse sweep. Si dangling bonds located at SiNC/nitride interfaces are suspected to be responsible for the observations.

Original language	English
Title of host publication	2012 IEEE Silicon Nanoelectronics Workshop, SNW 2012
DOIs	https://doi.org/10.1109/SNW.2012.6243353
State	Published - 2012
Event	2012 17th IEEE Silicon Nanoelectronics Workshop, SNW 2012 - Honolulu, HI, United States Duration: 10 Jun 2012 → 11 Jun 2012

Publication series

Name	2012 IEEE Silicon Nanoelectronics Workshop, SNW 2012

Conference

Conference	2012 17th IEEE Silicon Nanoelectronics Workshop, SNW 2012
Country/Territory	United States
City	Honolulu, HI
Period	10/06/12 → 11/06/12

Access to Document

10.1109/SNW.2012.6243353

Cite this

@inproceedings{e839120dd40c429ca593e33d57bf92af,

title = "Impacts of silicon nanocrystal incorporation on the transfer characteristics of poly-silicon nanowire SONOS devices",

abstract = "Gate-all-around poly-silicon nanowire (GAA poly-Si NW) SONOS devices embedded with silicon nanocrystals (Si-NCs) were fabricated and characterized. As Si-NCs are incorporated, the transfer characteristics show a large clockwise I d-V g hysteresis and a small kink under reverse sweep. Si dangling bonds located at SiNC/nitride interfaces are suspected to be responsible for the observations.",

author = "Lee, {Ko Hui} and Horng-Chih Lin and Huang, {Tiao Yuan}",

year = "2012",

doi = "10.1109/SNW.2012.6243353",

language = "English",

isbn = "9781467309943",

series = "2012 IEEE Silicon Nanoelectronics Workshop, SNW 2012",

booktitle = "2012 IEEE Silicon Nanoelectronics Workshop, SNW 2012",

note = "2012 17th IEEE Silicon Nanoelectronics Workshop, SNW 2012 ; Conference date: 10-06-2012 Through 11-06-2012",

}

Lee, KH, Lin, H-C & Huang, TY 2012, Impacts of silicon nanocrystal incorporation on the transfer characteristics of poly-silicon nanowire SONOS devices. in 2012 IEEE Silicon Nanoelectronics Workshop, SNW 2012., 6243353, 2012 IEEE Silicon Nanoelectronics Workshop, SNW 2012, 2012 17th IEEE Silicon Nanoelectronics Workshop, SNW 2012, Honolulu, HI, United States, 10/06/12. https://doi.org/10.1109/SNW.2012.6243353

Impacts of silicon nanocrystal incorporation on the transfer characteristics of poly-silicon nanowire SONOS devices. / Lee, Ko Hui; Lin, Horng-Chih; Huang, Tiao Yuan.
2012 IEEE Silicon Nanoelectronics Workshop, SNW 2012. 2012. 6243353 (2012 IEEE Silicon Nanoelectronics Workshop, SNW 2012).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Impacts of silicon nanocrystal incorporation on the transfer characteristics of poly-silicon nanowire SONOS devices

AU - Lee, Ko Hui

AU - Lin, Horng-Chih

AU - Huang, Tiao Yuan

PY - 2012

Y1 - 2012

N2 - Gate-all-around poly-silicon nanowire (GAA poly-Si NW) SONOS devices embedded with silicon nanocrystals (Si-NCs) were fabricated and characterized. As Si-NCs are incorporated, the transfer characteristics show a large clockwise I d-V g hysteresis and a small kink under reverse sweep. Si dangling bonds located at SiNC/nitride interfaces are suspected to be responsible for the observations.

AB - Gate-all-around poly-silicon nanowire (GAA poly-Si NW) SONOS devices embedded with silicon nanocrystals (Si-NCs) were fabricated and characterized. As Si-NCs are incorporated, the transfer characteristics show a large clockwise I d-V g hysteresis and a small kink under reverse sweep. Si dangling bonds located at SiNC/nitride interfaces are suspected to be responsible for the observations.

UR - http://www.scopus.com/inward/record.url?scp=84867212438&partnerID=8YFLogxK

U2 - 10.1109/SNW.2012.6243353

DO - 10.1109/SNW.2012.6243353

M3 - Conference contribution

AN - SCOPUS:84867212438

SN - 9781467309943

T3 - 2012 IEEE Silicon Nanoelectronics Workshop, SNW 2012

BT - 2012 IEEE Silicon Nanoelectronics Workshop, SNW 2012

T2 - 2012 17th IEEE Silicon Nanoelectronics Workshop, SNW 2012

Y2 - 10 June 2012 through 11 June 2012

ER -

Impacts of silicon nanocrystal incorporation on the transfer characteristics of poly-silicon nanowire SONOS devices

Abstract

Publication series

Conference

Access to Document

Other files and links

Fingerprint

Cite this