Impacts of nitric acid oxidation on low-temperature polycrystalline silicon TFTs with high-κ gate dielectric

Tsung Yu Yang; Ming Wen Ma; Kuo Hsing Kao; Chun Jung Su; Tien-Sheng Chao; Tan Fu Lei

Impacts of nitric acid oxidation on low-temperature polycrystalline silicon TFTs with high-κ gate dielectric

Tsung Yu Yang^*, Ming Wen Ma, Kuo Hsing Kao, Chun Jung Su, Tien-Sheng Chao, Tan Fu Lei

^*Corresponding author for this work

Department of Electrophysics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

In this paper, low-temperature polycrystalline-silicon thin-film transistors (LTPS-TFTs) with HfO₂ gate dielectric and nitric acid oxidation pre-treatment is investigated. Significant improvement on on/off current ratio and field effect mobility is observed due to the nitric acid oxidation pre-treatment. An excellent on/off current ratio and subthreshold swing, as well as low threshold voltage and I_off can be achieved without any other hydrogen passivation treatments. These improved performances can be attributed to both the high gate capacitance density using high-κ gate dielectric and the good interface quality by nitric acid oxidation of poly-silicon.

Original language	English
Title of host publication	AD'07 - Proceedings of Asia Display 2007
Pages	519-522
Number of pages	4
State	Published - Mar 2007
Event	Asia Display 2007, AD'07 - Shanghai, China Duration: 12 Mar 2007 → 16 Mar 2007

Publication series

Name	AD'07 - Proceedings of Asia Display 2007
Volume	1

Conference

Conference	Asia Display 2007, AD'07
Country/Territory	China
City	Shanghai
Period	12/03/07 → 16/03/07

Keywords

HfO
High-κ gate dielectric
Nitric acid oxidation
Thin-film transistors (TFTs)

Cite this

@inproceedings{5479953a76544c679918297a82e82e4d,

title = "Impacts of nitric acid oxidation on low-temperature polycrystalline silicon TFTs with high-κ gate dielectric",

abstract = "In this paper, low-temperature polycrystalline-silicon thin-film transistors (LTPS-TFTs) with HfO2 gate dielectric and nitric acid oxidation pre-treatment is investigated. Significant improvement on on/off current ratio and field effect mobility is observed due to the nitric acid oxidation pre-treatment. An excellent on/off current ratio and subthreshold swing, as well as low threshold voltage and Ioff can be achieved without any other hydrogen passivation treatments. These improved performances can be attributed to both the high gate capacitance density using high-κ gate dielectric and the good interface quality by nitric acid oxidation of poly-silicon.",

keywords = "HfO, High-κ gate dielectric, Nitric acid oxidation, Thin-film transistors (TFTs)",

author = "Yang, {Tsung Yu} and Ma, {Ming Wen} and Kao, {Kuo Hsing} and Su, {Chun Jung} and Tien-Sheng Chao and Lei, {Tan Fu}",

year = "2007",

month = mar,

language = "English",

isbn = "9787561752289",

series = "AD'07 - Proceedings of Asia Display 2007",

pages = "519--522",

booktitle = "AD'07 - Proceedings of Asia Display 2007",

note = "Asia Display 2007, AD'07 ; Conference date: 12-03-2007 Through 16-03-2007",

}

Impacts of nitric acid oxidation on low-temperature polycrystalline silicon TFTs with high-κ gate dielectric. / Yang, Tsung Yu; Ma, Ming Wen; Kao, Kuo Hsing et al.
AD'07 - Proceedings of Asia Display 2007. 2007. p. 519-522 (AD'07 - Proceedings of Asia Display 2007; Vol. 1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Impacts of nitric acid oxidation on low-temperature polycrystalline silicon TFTs with high-κ gate dielectric

AU - Yang, Tsung Yu

AU - Ma, Ming Wen

AU - Kao, Kuo Hsing

AU - Su, Chun Jung

AU - Chao, Tien-Sheng

AU - Lei, Tan Fu

PY - 2007/3

Y1 - 2007/3

N2 - In this paper, low-temperature polycrystalline-silicon thin-film transistors (LTPS-TFTs) with HfO2 gate dielectric and nitric acid oxidation pre-treatment is investigated. Significant improvement on on/off current ratio and field effect mobility is observed due to the nitric acid oxidation pre-treatment. An excellent on/off current ratio and subthreshold swing, as well as low threshold voltage and Ioff can be achieved without any other hydrogen passivation treatments. These improved performances can be attributed to both the high gate capacitance density using high-κ gate dielectric and the good interface quality by nitric acid oxidation of poly-silicon.

AB - In this paper, low-temperature polycrystalline-silicon thin-film transistors (LTPS-TFTs) with HfO2 gate dielectric and nitric acid oxidation pre-treatment is investigated. Significant improvement on on/off current ratio and field effect mobility is observed due to the nitric acid oxidation pre-treatment. An excellent on/off current ratio and subthreshold swing, as well as low threshold voltage and Ioff can be achieved without any other hydrogen passivation treatments. These improved performances can be attributed to both the high gate capacitance density using high-κ gate dielectric and the good interface quality by nitric acid oxidation of poly-silicon.

KW - HfO

KW - High-κ gate dielectric

KW - Nitric acid oxidation

KW - Thin-film transistors (TFTs)

UR - http://www.scopus.com/inward/record.url?scp=77958054629&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:77958054629

SN - 9787561752289

T3 - AD'07 - Proceedings of Asia Display 2007

SP - 519

EP - 522

BT - AD'07 - Proceedings of Asia Display 2007

T2 - Asia Display 2007, AD'07

Y2 - 12 March 2007 through 16 March 2007

ER -

Impacts of nitric acid oxidation on low-temperature polycrystalline silicon TFTs with high-κ gate dielectric

Abstract

Publication series

Conference

Keywords

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