Impacts of N 2 and NH 3 plasma surface treatments on high-performance LTPS-TFT with high-κ gate dielectric

Ming Wen Ma; Tien-Sheng Chao; Tsung Yu Chiang; Woei Cherng Wu; Tan Fu Lei

doi:10.1109/LED.2008.2004781

Impacts of N ₂ and NH ₃ plasma surface treatments on high-performance LTPS-TFT with high-κ gate dielectric

Ming Wen Ma^*, Tien-Sheng Chao, Tsung Yu Chiang, Woei Cherng Wu, Tan Fu Lei

^*Corresponding author for this work

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

Low-temperature polycrystalline-silicon thin-film transistors (LTPS-TFTs) with high- _κ gate dielectrics and plasma surface treatments are demonstrated for the first time. Significant field-effect mobility μ _FE improvements of ∼86.0% and 112.5% are observed for LTPS-TFTs with HfO ₂ gate dielectric after N ₂ and NH ₃ and NH ₃ plasma surface treatments, respectively. In addition, the N ₂ and NH ₃ plasma surface treatments can also reduce surface roughness scattering to enhance the field-effect mobility μ _FE at high gate bias voltage V _G , resulting in 217.0% and 219.6% improvements in driving current, respectively. As a result, high-performance LTPS-TFT with low threshold voltage V _TH ∼0.33 V, excellent subthreshold swing S.S. ∼ 0.156 V/decade, and high field-effect mobility μ _FE ∼ 62.02 cm ² /V · s would be suitable for the application of system-on-panel.

Original language	English
Pages (from-to)	1236-1238
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	29
Issue number	11
DOIs	https://doi.org/10.1109/LED.2008.2004781
State	Published - 18 Sep 2008

Keywords

High-ê
Low-temperature polycrystalline-silicon thin-film transistors (LTPS-TFTs)
N plasma
NH plasma

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title = "Impacts of N 2 and NH 3 plasma surface treatments on high-performance LTPS-TFT with high-κ gate dielectric",

abstract = " Low-temperature polycrystalline-silicon thin-film transistors (LTPS-TFTs) with high- κ gate dielectrics and plasma surface treatments are demonstrated for the first time. Significant field-effect mobility μ FE improvements of ∼86.0% and 112.5% are observed for LTPS-TFTs with HfO 2 gate dielectric after N 2 and NH 3 and NH 3 plasma surface treatments, respectively. In addition, the N 2 and NH 3 plasma surface treatments can also reduce surface roughness scattering to enhance the field-effect mobility μ FE at high gate bias voltage V G , resulting in 217.0% and 219.6% improvements in driving current, respectively. As a result, high-performance LTPS-TFT with low threshold voltage V TH ∼0.33 V, excellent subthreshold swing S.S. ∼ 0.156 V/decade, and high field-effect mobility μ FE ∼ 62.02 cm 2 /V · s would be suitable for the application of system-on-panel.",

keywords = "High-{\^e}, Low-temperature polycrystalline-silicon thin-film transistors (LTPS-TFTs), N plasma, NH plasma",

author = "Ma, {Ming Wen} and Tien-Sheng Chao and Chiang, {Tsung Yu} and Wu, {Woei Cherng} and Lei, {Tan Fu}",

year = "2008",

month = sep,

day = "18",

doi = "10.1109/LED.2008.2004781",

language = "English",

volume = "29",

pages = "1236--1238",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "11",

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TY - JOUR

T1 - Impacts of N 2 and NH 3 plasma surface treatments on high-performance LTPS-TFT with high-κ gate dielectric

AU - Ma, Ming Wen

AU - Chao, Tien-Sheng

AU - Chiang, Tsung Yu

AU - Wu, Woei Cherng

AU - Lei, Tan Fu

PY - 2008/9/18

Y1 - 2008/9/18

N2 - Low-temperature polycrystalline-silicon thin-film transistors (LTPS-TFTs) with high- κ gate dielectrics and plasma surface treatments are demonstrated for the first time. Significant field-effect mobility μ FE improvements of ∼86.0% and 112.5% are observed for LTPS-TFTs with HfO 2 gate dielectric after N 2 and NH 3 and NH 3 plasma surface treatments, respectively. In addition, the N 2 and NH 3 plasma surface treatments can also reduce surface roughness scattering to enhance the field-effect mobility μ FE at high gate bias voltage V G , resulting in 217.0% and 219.6% improvements in driving current, respectively. As a result, high-performance LTPS-TFT with low threshold voltage V TH ∼0.33 V, excellent subthreshold swing S.S. ∼ 0.156 V/decade, and high field-effect mobility μ FE ∼ 62.02 cm 2 /V · s would be suitable for the application of system-on-panel.

AB - Low-temperature polycrystalline-silicon thin-film transistors (LTPS-TFTs) with high- κ gate dielectrics and plasma surface treatments are demonstrated for the first time. Significant field-effect mobility μ FE improvements of ∼86.0% and 112.5% are observed for LTPS-TFTs with HfO 2 gate dielectric after N 2 and NH 3 and NH 3 plasma surface treatments, respectively. In addition, the N 2 and NH 3 plasma surface treatments can also reduce surface roughness scattering to enhance the field-effect mobility μ FE at high gate bias voltage V G , resulting in 217.0% and 219.6% improvements in driving current, respectively. As a result, high-performance LTPS-TFT with low threshold voltage V TH ∼0.33 V, excellent subthreshold swing S.S. ∼ 0.156 V/decade, and high field-effect mobility μ FE ∼ 62.02 cm 2 /V · s would be suitable for the application of system-on-panel.

KW - High-ê

KW - Low-temperature polycrystalline-silicon thin-film transistors (LTPS-TFTs)

KW - N plasma

KW - NH plasma

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DO - 10.1109/LED.2008.2004781

M3 - Article

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VL - 29

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JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

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ER -

Impacts of N ₂ and NH ₃ plasma surface treatments on high-performance LTPS-TFT with high-κ gate dielectric

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