Impacts of multiple strain-gate engineering on a zero-temperature- coefficient point

Tien Shun Chang; Tsung Yi Lu; Tien-Sheng Chao

doi:10.1109/LED.2013.2247736

Impacts of multiple strain-gate engineering on a zero-temperature- coefficient point

Tien Shun Chang^*, Tsung Yi Lu, Tien-Sheng Chao

^*Corresponding author for this work

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

The impacts of zero-temperature-coefficient (ZTC) points of various strained devices is presented in this paper. The current and mobility are reduced at high temperature by phonon scattering. The degree of mobility reduction becomes severe on devices with multiple strain-gate engineering. The reduction of mobility becomes severe as a result of impurity scattering, which results from gate implantation impurities. The ZTC point is decreased by multiple strain-gate engineering due to the decreased V^th.

Original language	English
Article number	6484132
Pages (from-to)	481-486
Number of pages	6
Journal	Ieee Electron Device Letters
Volume	34
Issue number	4
DOIs	https://doi.org/10.1109/LED.2013.2247736
State	Published - 2013

Keywords

Mobility
nMOSFETs
strain
temperature
zero-temperature-coefficient (ZTC) point

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10.1109/LED.2013.2247736

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abstract = "The impacts of zero-temperature-coefficient (ZTC) points of various strained devices is presented in this paper. The current and mobility are reduced at high temperature by phonon scattering. The degree of mobility reduction becomes severe on devices with multiple strain-gate engineering. The reduction of mobility becomes severe as a result of impurity scattering, which results from gate implantation impurities. The ZTC point is decreased by multiple strain-gate engineering due to the decreased Vth.",

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AB - The impacts of zero-temperature-coefficient (ZTC) points of various strained devices is presented in this paper. The current and mobility are reduced at high temperature by phonon scattering. The degree of mobility reduction becomes severe on devices with multiple strain-gate engineering. The reduction of mobility becomes severe as a result of impurity scattering, which results from gate implantation impurities. The ZTC point is decreased by multiple strain-gate engineering due to the decreased Vth.

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KW - nMOSFETs

KW - strain

KW - temperature

KW - zero-temperature-coefficient (ZTC) point

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Impacts of multiple strain-gate engineering on a zero-temperature- coefficient point

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Keywords

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