Impacts of hole trapping on the NBTI degradation and recovery in PMOS devices

Horng-Chih Lin; D. Y. Lee; S. C. Ou; Chao-Hsin Chien; T. Y. Huang

doi:10.1109/IWGI.2003.159188

Impacts of hole trapping on the NBTI degradation and recovery in PMOS devices

Horng-Chih Lin, D. Y. Lee, S. C. Ou, Chao-Hsin Chien, T. Y. Huang

Institute of Electronics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

7 Scopus citations

Abstract

In this paper, impacts of hole trapping on the negative bias temperature instability (NBTI) degradation and recovery in PMOS devices was investigated. Dual-gate p- and n-channel MOSFETs were fabricated using a standard CMOS twin-well technology.

Original language	English
Title of host publication	Extended Abstracts of International Workshop on Gate Insulator, IWGI 2003
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	76-79
Number of pages	4
ISBN (Electronic)	4891140372, 9784891140373
DOIs	https://doi.org/10.1109/IWGI.2003.159188
State	Published - 1 Jan 2003
Event	International Workshop on Gate Insulator, IWGI 2003 - Tokyo, Japan Duration: 6 Nov 2003 → 7 Nov 2003

Publication series

Name	Extended Abstracts of International Workshop on Gate Insulator, IWGI 2003

Conference

Conference	International Workshop on Gate Insulator, IWGI 2003
Country/Territory	Japan
City	Tokyo
Period	6/11/03 → 7/11/03

Keywords

CMOS technology
Degradation
Dielectrics
Interface states
MOS devices
Niobium compounds
Nitrogen
Stress
Temperature
Titanium compounds

Access to Document

10.1109/IWGI.2003.159188

Cite this

Lin, H-C., Lee, D. Y., Ou, S. C., Chien, C-H., & Huang, T. Y. (2003). Impacts of hole trapping on the NBTI degradation and recovery in PMOS devices. In Extended Abstracts of International Workshop on Gate Insulator, IWGI 2003 (pp. 76-79). [1252513] (Extended Abstracts of International Workshop on Gate Insulator, IWGI 2003). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IWGI.2003.159188

@inproceedings{846f2df5de764a6aabbafdade828a5ea,

title = "Impacts of hole trapping on the NBTI degradation and recovery in PMOS devices",

abstract = "In this paper, impacts of hole trapping on the negative bias temperature instability (NBTI) degradation and recovery in PMOS devices was investigated. Dual-gate p- and n-channel MOSFETs were fabricated using a standard CMOS twin-well technology.",

keywords = "CMOS technology, Degradation, Dielectrics, Interface states, MOS devices, Niobium compounds, Nitrogen, Stress, Temperature, Titanium compounds",

author = "Horng-Chih Lin and Lee, {D. Y.} and Ou, {S. C.} and Chao-Hsin Chien and Huang, {T. Y.}",

year = "2003",

month = jan,

day = "1",

doi = "10.1109/IWGI.2003.159188",

language = "English",

series = "Extended Abstracts of International Workshop on Gate Insulator, IWGI 2003",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "76--79",

booktitle = "Extended Abstracts of International Workshop on Gate Insulator, IWGI 2003",

address = "United States",

note = "null ; Conference date: 06-11-2003 Through 07-11-2003",

}

Lin, H-C, Lee, DY, Ou, SC, Chien, C-H & Huang, TY 2003, Impacts of hole trapping on the NBTI degradation and recovery in PMOS devices. in Extended Abstracts of International Workshop on Gate Insulator, IWGI 2003., 1252513, Extended Abstracts of International Workshop on Gate Insulator, IWGI 2003, Institute of Electrical and Electronics Engineers Inc., pp. 76-79, International Workshop on Gate Insulator, IWGI 2003, Tokyo, Japan, 6/11/03. https://doi.org/10.1109/IWGI.2003.159188

Impacts of hole trapping on the NBTI degradation and recovery in PMOS devices. / Lin, Horng-Chih; Lee, D. Y.; Ou, S. C. et al.

Extended Abstracts of International Workshop on Gate Insulator, IWGI 2003. Institute of Electrical and Electronics Engineers Inc., 2003. p. 76-79 1252513 (Extended Abstracts of International Workshop on Gate Insulator, IWGI 2003).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Impacts of hole trapping on the NBTI degradation and recovery in PMOS devices

AU - Lin, Horng-Chih

AU - Lee, D. Y.

AU - Ou, S. C.

AU - Chien, Chao-Hsin

AU - Huang, T. Y.

PY - 2003/1/1

Y1 - 2003/1/1

N2 - In this paper, impacts of hole trapping on the negative bias temperature instability (NBTI) degradation and recovery in PMOS devices was investigated. Dual-gate p- and n-channel MOSFETs were fabricated using a standard CMOS twin-well technology.

AB - In this paper, impacts of hole trapping on the negative bias temperature instability (NBTI) degradation and recovery in PMOS devices was investigated. Dual-gate p- and n-channel MOSFETs were fabricated using a standard CMOS twin-well technology.

KW - CMOS technology

KW - Degradation

KW - Dielectrics

KW - Interface states

KW - MOS devices

KW - Niobium compounds

KW - Nitrogen

KW - Stress

KW - Temperature

KW - Titanium compounds

UR - http://www.scopus.com/inward/record.url?scp=30844461496&partnerID=8YFLogxK

U2 - 10.1109/IWGI.2003.159188

DO - 10.1109/IWGI.2003.159188

M3 - Conference contribution

AN - SCOPUS:30844461496

T3 - Extended Abstracts of International Workshop on Gate Insulator, IWGI 2003

SP - 76

EP - 79

BT - Extended Abstracts of International Workshop on Gate Insulator, IWGI 2003

PB - Institute of Electrical and Electronics Engineers Inc.

Y2 - 6 November 2003 through 7 November 2003

ER -

Lin H-C, Lee DY, Ou SC, Chien C-H, Huang TY. Impacts of hole trapping on the NBTI degradation and recovery in PMOS devices. In Extended Abstracts of International Workshop on Gate Insulator, IWGI 2003. Institute of Electrical and Electronics Engineers Inc. 2003. p. 76-79. 1252513. (Extended Abstracts of International Workshop on Gate Insulator, IWGI 2003). doi: 10.1109/IWGI.2003.159188

Impacts of hole trapping on the NBTI degradation and recovery in PMOS devices

Abstract

Publication series

Conference

Keywords

Access to Document

Other files and links

Fingerprint

Cite this