@inproceedings{341aecab1e5840358af59ea03621c697,
title = "Impacts of Asymmetry Double Gate Structure on Reliability Degradation of Thin-Film Transistor with Nanosheet Channel",
abstract = "This work investigates the characteristics and reliability of double-gate (DG) and single-gate (SG) mode operations in polycrystalline-silicon nanosheet transistors (TFTs). It is observed that the threshold voltage and subthreshold swing in the DG mode are lower than those in the SG mode, while the on-state current is much higher. The DG mode provides better control over the channel potential, resulting in higher electron density and field-effect mobility. Moreover, the back-gate voltage can be used to adjust the threshold voltage of the TFT in SG mode. The impact of the back-gate voltage on the reliability of the device is also studied. The results indicate that the DG mode is more reliable than the SG mode under positive gate bias stress, as the DG mode has a stronger channel potential control ability. In contrast, the back-gate voltage has little effect on the reliability of the TFT in SG mode.",
author = "Ma, {William Cheng Yu} and Su, {Chun Jung} and Kao, {Kuo Hsing} and Cho, {Ta Chun} and Guo, {Jing Qiang} and Wu, {Cheng Jun} and Wu, {Po Ying} and Hung, {Jia Yuan}",
note = "Publisher Copyright: {\textcopyright} 2023 FTFMD.; 30th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2023 ; Conference date: 04-07-2023 Through 07-07-2023",
year = "2023",
language = "English",
series = "30th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2023 - Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "129--131",
booktitle = "30th International Workshop on Active-Matrix Flatpanel Displays and Devices",
address = "美國",
}