Impacts of ammonia background flows on structural and photoluminescence properties of InN dots grown on GaN by flow-rate modulation epitaxy

W. C. Ke; L. Lee; C. Y. Chen; W. C. Tsai; Wen-Hao Chang; Wu-Ching Chou; M. C. Lee; Wei-Kuo Chen; W. J. Lin; Y. C. Cheng

doi:10.1063/1.2425038

Impacts of ammonia background flows on structural and photoluminescence properties of InN dots grown on GaN by flow-rate modulation epitaxy

W. C. Ke, L. Lee, C. Y. Chen, W. C. Tsai, Wen-Hao Chang^*, Wu-Ching Chou, M. C. Lee, Wei-Kuo Chen, W. J. Lin, Y. C. Cheng

^*Corresponding author for this work

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

Structural and photoluminescence (PL) properties of InN dots grown on GaN by metal organic vapor phase epitaxy using the flow-rate modulation technique, and their dependence on growth conditions, were investigated. An ammonia (N H3) background flow was intentionally supplied during indium deposition periods to control the kinetics of adatoms and hence the morphology of InN dots. Samples prepared under lower N H3 background flows generally exhibit narrower and more intense PL signals peaked at lower emission energies. The authors point out that the N H3 background flow is an important parameter that controls not only the nucleation process but also the emission property of InN dots.

Original language	English
Article number	263117
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	89
Issue number	26
DOIs	https://doi.org/10.1063/1.2425038
State	Published - 25 Dec 2006

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title = "Impacts of ammonia background flows on structural and photoluminescence properties of InN dots grown on GaN by flow-rate modulation epitaxy",

abstract = "Structural and photoluminescence (PL) properties of InN dots grown on GaN by metal organic vapor phase epitaxy using the flow-rate modulation technique, and their dependence on growth conditions, were investigated. An ammonia (N H3) background flow was intentionally supplied during indium deposition periods to control the kinetics of adatoms and hence the morphology of InN dots. Samples prepared under lower N H3 background flows generally exhibit narrower and more intense PL signals peaked at lower emission energies. The authors point out that the N H3 background flow is an important parameter that controls not only the nucleation process but also the emission property of InN dots.",

author = "Ke, {W. C.} and L. Lee and Chen, {C. Y.} and Tsai, {W. C.} and Wen-Hao Chang and Wu-Ching Chou and Lee, {M. C.} and Wei-Kuo Chen and Lin, {W. J.} and Cheng, {Y. C.}",

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T1 - Impacts of ammonia background flows on structural and photoluminescence properties of InN dots grown on GaN by flow-rate modulation epitaxy

AU - Ke, W. C.

AU - Lee, L.

AU - Chen, C. Y.

AU - Tsai, W. C.

AU - Chang, Wen-Hao

AU - Chou, Wu-Ching

AU - Lee, M. C.

AU - Chen, Wei-Kuo

AU - Lin, W. J.

AU - Cheng, Y. C.

PY - 2006/12/25

Y1 - 2006/12/25

N2 - Structural and photoluminescence (PL) properties of InN dots grown on GaN by metal organic vapor phase epitaxy using the flow-rate modulation technique, and their dependence on growth conditions, were investigated. An ammonia (N H3) background flow was intentionally supplied during indium deposition periods to control the kinetics of adatoms and hence the morphology of InN dots. Samples prepared under lower N H3 background flows generally exhibit narrower and more intense PL signals peaked at lower emission energies. The authors point out that the N H3 background flow is an important parameter that controls not only the nucleation process but also the emission property of InN dots.

AB - Structural and photoluminescence (PL) properties of InN dots grown on GaN by metal organic vapor phase epitaxy using the flow-rate modulation technique, and their dependence on growth conditions, were investigated. An ammonia (N H3) background flow was intentionally supplied during indium deposition periods to control the kinetics of adatoms and hence the morphology of InN dots. Samples prepared under lower N H3 background flows generally exhibit narrower and more intense PL signals peaked at lower emission energies. The authors point out that the N H3 background flow is an important parameter that controls not only the nucleation process but also the emission property of InN dots.

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U2 - 10.1063/1.2425038

DO - 10.1063/1.2425038

M3 - Article

AN - SCOPUS:33846119711

SN - 0003-6951

VL - 89

SP - 1

EP - 3

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 26

M1 - 263117

ER -

Impacts of ammonia background flows on structural and photoluminescence properties of InN dots grown on GaN by flow-rate modulation epitaxy

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