Impact of work function design on the stability and performance of Ultra-Thin-Body SOI subthreshold SRAM

Vita Pi Ho Hu; Ming Long Fan; Pin Su; Ching Te Chuang

doi:10.1109/ESSDERC.2009.5331507

Impact of work function design on the stability and performance of Ultra-Thin-Body SOI subthreshold SRAM

Vita Pi Ho Hu, Ming Long Fan, Pin Su, Ching Te Chuang

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

4 Scopus citations

Abstract

This paper analyzes and compares the stability, margin, and performance of Ultra-Thin-Body (UTB) SOl 6T SRAM cells operating in subthreshold region with single midgap and dual work function (WF) design. Our results indicate that UTB SOl 6T SRAM cells using dual quarter band-gap WF devices (NFET/PFET = 4.35eV/4.95eV) show comparable Read Static Noise Margin (RSNM) and 84% improvement in Write Static Noise Margin (WSNM) as comparaed with that using the single mid-gap WF devices. The "cell" access time improves significantly with correspondingly higher stand-by leakage. Our study suggests that the quarter band-gap WF devices not only support the high performance applications but also meet the stability requirement and offer higher performance while trading-off leakage for subthreshold SRAM applications.

Original language	English
Title of host publication	ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference
Pages	145-148
Number of pages	4
DOIs	https://doi.org/10.1109/ESSDERC.2009.5331507
State	Published - 1 Dec 2009
Event	39th European Solid-State Device Research Conference, ESSDERC 2009 - Athens, Greece Duration: 14 Sep 2009 → 18 Sep 2009

Publication series

Name	ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference

Conference

Conference	39th European Solid-State Device Research Conference, ESSDERC 2009
Country/Territory	Greece
City	Athens
Period	14/09/09 → 18/09/09

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10.1109/ESSDERC.2009.5331507

Cite this

Hu, V. P. H., Fan, M. L., Su, P., & Chuang, C. T. (2009). Impact of work function design on the stability and performance of Ultra-Thin-Body SOI subthreshold SRAM. In ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference (pp. 145-148). Article 5331507 (ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference). https://doi.org/10.1109/ESSDERC.2009.5331507

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abstract = "This paper analyzes and compares the stability, margin, and performance of Ultra-Thin-Body (UTB) SOl 6T SRAM cells operating in subthreshold region with single midgap and dual work function (WF) design. Our results indicate that UTB SOl 6T SRAM cells using dual quarter band-gap WF devices (NFET/PFET = 4.35eV/4.95eV) show comparable Read Static Noise Margin (RSNM) and 84% improvement in Write Static Noise Margin (WSNM) as comparaed with that using the single mid-gap WF devices. The {"}cell{"} access time improves significantly with correspondingly higher stand-by leakage. Our study suggests that the quarter band-gap WF devices not only support the high performance applications but also meet the stability requirement and offer higher performance while trading-off leakage for subthreshold SRAM applications.",

author = "Hu, {Vita Pi Ho} and Fan, {Ming Long} and Pin Su and Chuang, {Ching Te}",

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Hu, VPH, Fan, ML, Su, P & Chuang, CT 2009, Impact of work function design on the stability and performance of Ultra-Thin-Body SOI subthreshold SRAM. in ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference., 5331507, ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference, pp. 145-148, 39th European Solid-State Device Research Conference, ESSDERC 2009, Athens, Greece, 14/09/09. https://doi.org/10.1109/ESSDERC.2009.5331507

Impact of work function design on the stability and performance of Ultra-Thin-Body SOI subthreshold SRAM. / Hu, Vita Pi Ho; Fan, Ming Long; Su, Pin et al.
ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference. 2009. p. 145-148 5331507 (ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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Hu VPH, Fan ML, Su P, Chuang CT. Impact of work function design on the stability and performance of Ultra-Thin-Body SOI subthreshold SRAM. In ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference. 2009. p. 145-148. 5331507. (ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference). doi: 10.1109/ESSDERC.2009.5331507

Impact of work function design on the stability and performance of Ultra-Thin-Body SOI subthreshold SRAM

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