@inproceedings{80333ed723a04e96a51786ad2c14b8c8,
title = "Impact of uniaxial strain on channel backscattering characteristics and drain current variation for nanoscale PMOSFETs",
abstract = "Using an improved temperature-dependent method, this paper clarifies that channel backscattering of nanoscale PMOSFETs can be reduced by the uniaxially compressive strain. For the first time, the electrostatic potential of the source-channel junction barrier has been experimentally characterized with strain and gate voltage dependence. We further demonstrate that the strain technology can improve the drain current variation as well as the mismatching properties through the enhanced ballistic efficiency. Moreover, the improvement shows gate length and drain voltage dependence.",
author = "Wei Lee and Kuo, {Jack J Y} and Chen, {Willian P N} and Pin Su and Jeng, {Min Chie}",
year = "2009",
month = jun,
day = "15",
language = "English",
isbn = "9784863480094",
series = "Digest of Technical Papers - Symposium on VLSI Technology",
pages = "112--113",
booktitle = "2009 Symposium on VLSI Technology, VLSIT 2009",
note = "2009 Symposium on VLSI Technology, VLSIT 2009 ; Conference date: 16-06-2009 Through 18-06-2009",
}